Study of self-organized InAs/GaAs quantum dots by photoluminescence and photoreflectance

J. S. Hwang, C. C. Chang, W. C. Hwang, G. S. Chang, L. B. Chen, Y. T. Lu, H. H. Lin, M. C. Chen

Research output: Contribution to journalConference article

Abstract

By using photoluminescence and photoreflectance ranging from 8 to 300K, this study investigates transition energies in InAs/GaAs quantum dot (QD) samples grown on (100) misoriented 7o towards (110) GaAs substrates using gas source molecular beam epitaxy with various V/III ratios. Only exciton transition appears in the PL spectra of all samples. Experimental results indicate that the decrease of the FWHM of the PL peak with an increasing temperature can be attributed to the effective suppression of non-predominant size QD emissions due to carrier tunneling between nearby dots. Signals from all relevant portions of the samples have been observed in the PR spectra. One to three transition energies in QDs, depending on the dot size, are observed in the PR spectra. Furthermore, the binding energies of excitons and thus the QD size are estimated from the temperature dependence of the exciton energies and the first transition energies of QDs.

Original languageEnglish
Pages (from-to)J3.5.1-J3.5.6
JournalMaterials Research Society Symposium - Proceedings
Volume642
Publication statusPublished - 2001 Dec 1
EventSemiconductor Quantum Dots II - Boston, MA, United States
Duration: 2000 Nov 272000 Nov 30

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Excitons
Semiconductor quantum dots
Photoluminescence
quantum dots
Electron transitions
photoluminescence
excitons
Gas source molecular beam epitaxy
Full width at half maximum
Binding energy
energy
Temperature
molecular beam epitaxy
binding energy
retarding
Substrates
temperature dependence
LDS 751
gallium arsenide
indium arsenide

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Hwang, J. S., Chang, C. C., Hwang, W. C., Chang, G. S., Chen, L. B., Lu, Y. T., ... Chen, M. C. (2001). Study of self-organized InAs/GaAs quantum dots by photoluminescence and photoreflectance. Materials Research Society Symposium - Proceedings, 642, J3.5.1-J3.5.6.
Hwang, J. S. ; Chang, C. C. ; Hwang, W. C. ; Chang, G. S. ; Chen, L. B. ; Lu, Y. T. ; Lin, H. H. ; Chen, M. C. / Study of self-organized InAs/GaAs quantum dots by photoluminescence and photoreflectance. In: Materials Research Society Symposium - Proceedings. 2001 ; Vol. 642. pp. J3.5.1-J3.5.6.
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Hwang, JS, Chang, CC, Hwang, WC, Chang, GS, Chen, LB, Lu, YT, Lin, HH & Chen, MC 2001, 'Study of self-organized InAs/GaAs quantum dots by photoluminescence and photoreflectance', Materials Research Society Symposium - Proceedings, vol. 642, pp. J3.5.1-J3.5.6.

Study of self-organized InAs/GaAs quantum dots by photoluminescence and photoreflectance. / Hwang, J. S.; Chang, C. C.; Hwang, W. C.; Chang, G. S.; Chen, L. B.; Lu, Y. T.; Lin, H. H.; Chen, M. C.

In: Materials Research Society Symposium - Proceedings, Vol. 642, 01.12.2001, p. J3.5.1-J3.5.6.

Research output: Contribution to journalConference article

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T1 - Study of self-organized InAs/GaAs quantum dots by photoluminescence and photoreflectance

AU - Hwang, J. S.

AU - Chang, C. C.

AU - Hwang, W. C.

AU - Chang, G. S.

AU - Chen, L. B.

AU - Lu, Y. T.

AU - Lin, H. H.

AU - Chen, M. C.

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N2 - By using photoluminescence and photoreflectance ranging from 8 to 300K, this study investigates transition energies in InAs/GaAs quantum dot (QD) samples grown on (100) misoriented 7o towards (110) GaAs substrates using gas source molecular beam epitaxy with various V/III ratios. Only exciton transition appears in the PL spectra of all samples. Experimental results indicate that the decrease of the FWHM of the PL peak with an increasing temperature can be attributed to the effective suppression of non-predominant size QD emissions due to carrier tunneling between nearby dots. Signals from all relevant portions of the samples have been observed in the PR spectra. One to three transition energies in QDs, depending on the dot size, are observed in the PR spectra. Furthermore, the binding energies of excitons and thus the QD size are estimated from the temperature dependence of the exciton energies and the first transition energies of QDs.

AB - By using photoluminescence and photoreflectance ranging from 8 to 300K, this study investigates transition energies in InAs/GaAs quantum dot (QD) samples grown on (100) misoriented 7o towards (110) GaAs substrates using gas source molecular beam epitaxy with various V/III ratios. Only exciton transition appears in the PL spectra of all samples. Experimental results indicate that the decrease of the FWHM of the PL peak with an increasing temperature can be attributed to the effective suppression of non-predominant size QD emissions due to carrier tunneling between nearby dots. Signals from all relevant portions of the samples have been observed in the PR spectra. One to three transition energies in QDs, depending on the dot size, are observed in the PR spectra. Furthermore, the binding energies of excitons and thus the QD size are estimated from the temperature dependence of the exciton energies and the first transition energies of QDs.

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