Study of self-organized InAs/GaAs quantum dots by photoluminescence and photoreflectance

Jenn Shyong Hwang; Mei Fei Chen; Kuang I. Lin; Chiang Nan Tsai; Wen Chi Hwang; Wei Yang Chou; Hao Hsiung Lin; Ming Ching Chen

doi:10.1143/jjap.42.5876

Study of self-organized InAs/GaAs quantum dots by photoluminescence and photoreflectance

Jenn Shyong Hwang, Mei Fei Chen, Kuang I. Lin, Chiang Nan Tsai, Wen Chi Hwang, Wei Yang Chou, Hao Hsiung Lin, Ming Ching Chen

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3 Citations (Scopus)

Abstract

Using photoluminescence and photoreflectance ranging from 8 to 300 K, this study investigates transition energies in InAs/GaAs quantum dot (QD) samples grown on (100) misoriented 7° towards (100) GaAs substrates using gas source molecular beam epitaxy with various group V/III flux ratios. Only the exciton transition appears in the photoluminescence spectra (PL) of all samples. Experimental results indicate that the decrease in the full width at half maximum (FWHM) of the PL peak with increasing temperature can be attributed to the effective suppression of non-predominant size QD emissions due to carrier tunneling between nearby dots. Signals from all relevant portions of the samples have been observed in the PR spectra. One to three transition energies in QDs, depending on the dot size, are observed in the PR spectra.

Original language	English
Pages (from-to)	5876-5879
Number of pages	4
Journal	Japanese Journal of Applied Physics
Volume	42
Issue number	9 A
DOIs	https://doi.org/10.1143/jjap.42.5876
Publication status	Published - 2003 Sept

All Science Journal Classification (ASJC) codes

General Engineering
General Physics and Astronomy

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title = "Study of self-organized InAs/GaAs quantum dots by photoluminescence and photoreflectance",

abstract = "Using photoluminescence and photoreflectance ranging from 8 to 300 K, this study investigates transition energies in InAs/GaAs quantum dot (QD) samples grown on (100) misoriented 7° towards (100) GaAs substrates using gas source molecular beam epitaxy with various group V/III flux ratios. Only the exciton transition appears in the photoluminescence spectra (PL) of all samples. Experimental results indicate that the decrease in the full width at half maximum (FWHM) of the PL peak with increasing temperature can be attributed to the effective suppression of non-predominant size QD emissions due to carrier tunneling between nearby dots. Signals from all relevant portions of the samples have been observed in the PR spectra. One to three transition energies in QDs, depending on the dot size, are observed in the PR spectra.",

author = "Hwang, {Jenn Shyong} and Chen, {Mei Fei} and Lin, {Kuang I.} and Tsai, {Chiang Nan} and Hwang, {Wen Chi} and Chou, {Wei Yang} and Lin, {Hao Hsiung} and Chen, {Ming Ching}",

year = "2003",

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doi = "10.1143/jjap.42.5876",

language = "English",

volume = "42",

pages = "5876--5879",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

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T1 - Study of self-organized InAs/GaAs quantum dots by photoluminescence and photoreflectance

AU - Hwang, Jenn Shyong

AU - Chen, Mei Fei

AU - Lin, Kuang I.

AU - Tsai, Chiang Nan

AU - Hwang, Wen Chi

AU - Chou, Wei Yang

AU - Lin, Hao Hsiung

AU - Chen, Ming Ching

PY - 2003/9

Y1 - 2003/9

N2 - Using photoluminescence and photoreflectance ranging from 8 to 300 K, this study investigates transition energies in InAs/GaAs quantum dot (QD) samples grown on (100) misoriented 7° towards (100) GaAs substrates using gas source molecular beam epitaxy with various group V/III flux ratios. Only the exciton transition appears in the photoluminescence spectra (PL) of all samples. Experimental results indicate that the decrease in the full width at half maximum (FWHM) of the PL peak with increasing temperature can be attributed to the effective suppression of non-predominant size QD emissions due to carrier tunneling between nearby dots. Signals from all relevant portions of the samples have been observed in the PR spectra. One to three transition energies in QDs, depending on the dot size, are observed in the PR spectra.

AB - Using photoluminescence and photoreflectance ranging from 8 to 300 K, this study investigates transition energies in InAs/GaAs quantum dot (QD) samples grown on (100) misoriented 7° towards (100) GaAs substrates using gas source molecular beam epitaxy with various group V/III flux ratios. Only the exciton transition appears in the photoluminescence spectra (PL) of all samples. Experimental results indicate that the decrease in the full width at half maximum (FWHM) of the PL peak with increasing temperature can be attributed to the effective suppression of non-predominant size QD emissions due to carrier tunneling between nearby dots. Signals from all relevant portions of the samples have been observed in the PR spectra. One to three transition energies in QDs, depending on the dot size, are observed in the PR spectra.

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JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 9 A

ER -

Study of self-organized InAs/GaAs quantum dots by photoluminescence and photoreflectance

Abstract

All Science Journal Classification (ASJC) codes

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