Study of self-organized InAs/GaAs quantum dots by photoluminescence and photoreflectance

Jenn Shyong Hwang, Mei Fei Chen, Kuang I. Lin, Chiang Nan Tsai, Wen Chi Hwang, Wei Yang Chou, Hao Hsiung Lin, Ming Ching Chen

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Using photoluminescence and photoreflectance ranging from 8 to 300 K, this study investigates transition energies in InAs/GaAs quantum dot (QD) samples grown on (100) misoriented 7° towards (100) GaAs substrates using gas source molecular beam epitaxy with various group V/III flux ratios. Only the exciton transition appears in the photoluminescence spectra (PL) of all samples. Experimental results indicate that the decrease in the full width at half maximum (FWHM) of the PL peak with increasing temperature can be attributed to the effective suppression of non-predominant size QD emissions due to carrier tunneling between nearby dots. Signals from all relevant portions of the samples have been observed in the PR spectra. One to three transition energies in QDs, depending on the dot size, are observed in the PR spectra.

Original languageEnglish
Pages (from-to)5876-5879
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number9 A
Publication statusPublished - 2003 Sep 1

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Semiconductor quantum dots
Photoluminescence
quantum dots
photoluminescence
Gas source molecular beam epitaxy
Electron transitions
Full width at half maximum
Excitons
Fluxes
molecular beam epitaxy
excitons
retarding
Substrates
energy
gases
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Hwang, Jenn Shyong ; Chen, Mei Fei ; Lin, Kuang I. ; Tsai, Chiang Nan ; Hwang, Wen Chi ; Chou, Wei Yang ; Lin, Hao Hsiung ; Chen, Ming Ching. / Study of self-organized InAs/GaAs quantum dots by photoluminescence and photoreflectance. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2003 ; Vol. 42, No. 9 A. pp. 5876-5879.
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Study of self-organized InAs/GaAs quantum dots by photoluminescence and photoreflectance. / Hwang, Jenn Shyong; Chen, Mei Fei; Lin, Kuang I.; Tsai, Chiang Nan; Hwang, Wen Chi; Chou, Wei Yang; Lin, Hao Hsiung; Chen, Ming Ching.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 42, No. 9 A, 01.09.2003, p. 5876-5879.

Research output: Contribution to journalArticle

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AU - Hwang, Wen Chi

AU - Chou, Wei Yang

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