Study of silicon nitride film embedded with silicon quantum dots

Pei Ling Li, Chie Gau, Bau Tong Dai, Chien Wei Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

This study report the silicon quantum dots that precipitate from silicon rich nitride films by thermal annealed. We examined various annealing conditions on silicon rich nitride films that deposited in the same PECVD deposition program. We could find the sample that went through high annealed temperature and sufficient annealed time, such as annealed at 1000°C for 1 hour, would get better dots size at about 5 nm.

Original languageEnglish
Title of host publicationNEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems
Pages646-649
Number of pages4
DOIs
Publication statusPublished - 2011 Oct 4
Event6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2011 - Kaohsiung, Taiwan
Duration: 2011 Feb 202011 Feb 23

Publication series

NameNEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems

Other

Other6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2011
CountryTaiwan
CityKaohsiung
Period11-02-2011-02-23

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

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    Li, P. L., Gau, C., Dai, B. T., & Liu, C. W. (2011). Study of silicon nitride film embedded with silicon quantum dots. In NEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (pp. 646-649). [6017438] (NEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems). https://doi.org/10.1109/NEMS.2011.6017438