Study of stark effect in AlSb/GaSb/InAs/AlSb quantum well

Y. W. Chen, H. S. Li, K. L. Wang

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

A novel quantum well structure is proposed based on a type II staggered band-offset material system, for example, an AlSb/InAs/GaSb/AlSb quantum well[1]. In this type of quantum well, the valence band of GaSb is higher than the conduction band of InAs. The overlap band offset property of this quantum well can provide free carriers without extrinsic doping since the carriers can transfer from GaSb to InAs. The free carrier concentration is determined by temperature and the energy difference between the conduction state in InAs and the valence state in GaSb. Applying a bias across the quantum well, i.e. Stark effect, will change the energy difference and thus the free carrier concentration. The Stark effect in this structure is studied by a transfer matrix K·P approach including the band bending effect. Preliminary experimental results and potential applications for this type of device are discussed.

Original languageEnglish
Pages (from-to)137-140
Number of pages4
JournalSuperlattices and Microstructures
Volume14
Issue number2-3
DOIs
Publication statusPublished - 1993 Sept

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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