Abstract
The study addresses the optical properties and morphologies of Al-doped ZnO (AZO) films textured by the chemical wet-etching method using three different acid solutions: HCl, HNO3, and H3PO4. An initial AZO film was sputtered on a glass substrate by rf magnetron sputtering. The film surface was then textured by wet-etching using diluted HCl, HNO 3, or H3PO4. The average transmittance of all the post-treated ZnO:Al films remains around 7580% as measured by a UVvis analyzer. A haze ratio calculation shows that the light scattering properties can be significantly controlled by varying the etchant species, acid concentration, and etching time. Further, the HNO3 etchant gives the highest haze ratio of 43.0% at a wavelength of 550 nm. Compared with solar cells deposited on non-textured ZnO:Al films, a significant enhancement in the short-circuit current density of 17.8% for the a-Si solar cells with textured ZnO:Al films was achieved.
| Original language | English |
|---|---|
| Pages (from-to) | 52-56 |
| Number of pages | 5 |
| Journal | Journal of Physics and Chemistry of Solids |
| Volume | 73 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2012 Jan |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
All Science Journal Classification (ASJC) codes
- General Chemistry
- General Materials Science
- Condensed Matter Physics
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