Study of the dominant luminescence mechanism in InGaN/GaN multiple quantum wells comprised of ultrasmall InGaN quasiquantum dots

Yen Lin Lai, Chuan Pu Liu, Zheng Quan Chen

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

High quality green (508 nm) and blue (424 nm) light emitting diodes (LEDs) from InGaNGaN multiple quantum wells with stable ultrasmall indium-rich clusters of 2 nm and 3 nm from two different nominal indium contents have been grown by metalorganic chemical vapor deposition. Comprehensive calculations including polarization, piezoelectric field, and size effect help derive an indium composition of 59% and 31% for the In-rich clusters of 2 nm and 3 nm, which agrees amazingly well with the asymmetric phase diagram for phase separation. From this model, we can further demonstrate that the dominant emitting mechanism for green LED is the polarization field, however, for blue LED, both the size effect and polarization effect are equally important.

Original languageEnglish
Article number121915
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number12
DOIs
Publication statusPublished - 2005 Mar 21

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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