Study of the metal-semiconductor transition in Rb2Mo6Se6, Rb2Mo6Te6 and Cs2Mo6Te6 under pressures

P. H. Hor, W. C. Fan, L. S. Chou, R. L. Meng, C. W. Chu, J. M. Tarascon, M. K. Wu

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

The resistance of quasi-one-dimensional single crystals Rb2Mo6Se6, Rb2Mo6Te6 and Cs2Mo6Te6 has been measured up to 17 kbar down to 1.2 K. The broad metal-semiconductor transition amd the associated activation energy are suppressed monotonically by pressure. The resistivity at room temperature is suppressed only slightly by pressure, but it decreases rapidly with pressure at low temperature where the resistivity in both Rb2Mo6Te6 and Cs2Mo6Te6 exhibits a drastic reduction in the activation energy. The results suggest that the broad metal-semiconductor transition is associated with a Peierls transition.

Original languageEnglish
Pages (from-to)231-235
Number of pages5
JournalSolid State Communications
Volume55
Issue number3
DOIs
Publication statusPublished - 1985 Jul

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Study of the metal-semiconductor transition in Rb<sub>2</sub>Mo<sub>6</sub>Se<sub>6</sub>, Rb<sub>2</sub>Mo<sub>6</sub>Te<sub>6</sub> and Cs<sub>2</sub>Mo<sub>6</sub>Te<sub>6</sub> under pressures'. Together they form a unique fingerprint.

Cite this