Study of the metal-semiconductor transition in Rb2Mo6Se6, Rb2Mo6Te6 and Cs2Mo6Te6 under pressures

P. H. Hor; W. C. Fan; L. S. Chou; R. L. Meng; C. W. Chu; J. M. Tarascon; M. K. Wu

doi:10.1016/0038-1098(85)90722-7

Study of the metal-semiconductor transition in Rb₂Mo₆Se₆, Rb₂Mo₆Te₆ and Cs₂Mo₆Te₆ under pressures

P. H. Hor, W. C. Fan, L. S. Chou, R. L. Meng, C. W. Chu, J. M. Tarascon, M. K. Wu

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Abstract

The resistance of quasi-one-dimensional single crystals Rb₂Mo₆Se₆, Rb₂Mo₆Te₆ and Cs₂Mo₆Te₆ has been measured up to 17 kbar down to 1.2 K. The broad metal-semiconductor transition amd the associated activation energy are suppressed monotonically by pressure. The resistivity at room temperature is suppressed only slightly by pressure, but it decreases rapidly with pressure at low temperature where the resistivity in both Rb₂Mo₆Te₆ and Cs₂Mo₆Te₆ exhibits a drastic reduction in the activation energy. The results suggest that the broad metal-semiconductor transition is associated with a Peierls transition.

Original language	English
Pages (from-to)	231-235
Number of pages	5
Journal	Solid State Communications
Volume	55
Issue number	3
DOIs	https://doi.org/10.1016/0038-1098(85)90722-7
Publication status	Published - 1985 Jul

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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10.1016/0038-1098(85)90722-7

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@article{f0dfd47ff9514fe79106fac52f9471a7,

title = "Study of the metal-semiconductor transition in Rb2Mo6Se6, Rb2Mo6Te6 and Cs2Mo6Te6 under pressures",

abstract = "The resistance of quasi-one-dimensional single crystals Rb2Mo6Se6, Rb2Mo6Te6 and Cs2Mo6Te6 has been measured up to 17 kbar down to 1.2 K. The broad metal-semiconductor transition amd the associated activation energy are suppressed monotonically by pressure. The resistivity at room temperature is suppressed only slightly by pressure, but it decreases rapidly with pressure at low temperature where the resistivity in both Rb2Mo6Te6 and Cs2Mo6Te6 exhibits a drastic reduction in the activation energy. The results suggest that the broad metal-semiconductor transition is associated with a Peierls transition.",

author = "Hor, {P. H.} and Fan, {W. C.} and Chou, {L. S.} and Meng, {R. L.} and Chu, {C. W.} and Tarascon, {J. M.} and Wu, {M. K.}",

note = "Funding Information: Acknowledgement - Work at Houston is supported in part by the National Science Foundation Low Temperature Physics Program Grant No. DMR-8204173 and the Energy Laboratory of the University of Houston and at Huntsville by the Research Institute of the University of Alabama at Huntsville.",

year = "1985",

month = jul,

doi = "10.1016/0038-1098(85)90722-7",

language = "English",

volume = "55",

pages = "231--235",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Limited",

number = "3",

}

TY - JOUR

T1 - Study of the metal-semiconductor transition in Rb2Mo6Se6, Rb2Mo6Te6 and Cs2Mo6Te6 under pressures

AU - Hor, P. H.

AU - Fan, W. C.

AU - Chou, L. S.

AU - Meng, R. L.

AU - Chu, C. W.

AU - Tarascon, J. M.

AU - Wu, M. K.

N1 - Funding Information: Acknowledgement - Work at Houston is supported in part by the National Science Foundation Low Temperature Physics Program Grant No. DMR-8204173 and the Energy Laboratory of the University of Houston and at Huntsville by the Research Institute of the University of Alabama at Huntsville.

PY - 1985/7

Y1 - 1985/7

N2 - The resistance of quasi-one-dimensional single crystals Rb2Mo6Se6, Rb2Mo6Te6 and Cs2Mo6Te6 has been measured up to 17 kbar down to 1.2 K. The broad metal-semiconductor transition amd the associated activation energy are suppressed monotonically by pressure. The resistivity at room temperature is suppressed only slightly by pressure, but it decreases rapidly with pressure at low temperature where the resistivity in both Rb2Mo6Te6 and Cs2Mo6Te6 exhibits a drastic reduction in the activation energy. The results suggest that the broad metal-semiconductor transition is associated with a Peierls transition.

AB - The resistance of quasi-one-dimensional single crystals Rb2Mo6Se6, Rb2Mo6Te6 and Cs2Mo6Te6 has been measured up to 17 kbar down to 1.2 K. The broad metal-semiconductor transition amd the associated activation energy are suppressed monotonically by pressure. The resistivity at room temperature is suppressed only slightly by pressure, but it decreases rapidly with pressure at low temperature where the resistivity in both Rb2Mo6Te6 and Cs2Mo6Te6 exhibits a drastic reduction in the activation energy. The results suggest that the broad metal-semiconductor transition is associated with a Peierls transition.

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U2 - 10.1016/0038-1098(85)90722-7

DO - 10.1016/0038-1098(85)90722-7

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AN - SCOPUS:0022097770

SN - 0038-1098

VL - 55

SP - 231

EP - 235

JO - Solid State Communications

JF - Solid State Communications

IS - 3

ER -

Study of the metal-semiconductor transition in Rb₂Mo₆Se₆, Rb₂Mo₆Te₆ and Cs₂Mo₆Te₆ under pressures

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