Study of the multiple-negative-differential-resistance (MNDR) switching behaviors based on heterojunction bipolar transistor (HBT) structures

Wei Chou Wang, Hsi Jen Pan, Kuo Hui Yu, Kun Wei Lin, Jung Hui Tsai, Shiou Ying Cheng, Wen-Chau Liu

Research output: Contribution to journalArticle

Abstract

In this paper, we demonstrate multiple-negative-differential-resistance (MNDR) switching behaviors based on the InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT) and InGaAlAs/InP heterojunction bipolar transistor (HBT) structures. The devices act like conventional HBTs under forward operation mode. The proposed HEBTs show lower offset voltage due to the correct design of the emitter thickness. On the other hand, MNDR phenomena resulting from avalanche multiplication, confinement effects and the potential redistribution process are observed under inverted operation mode for both devices. In addition, three-terminal NDR characteristics are investigated under the applied base current IB. Moreover, for the InGaAlAs/InP HBT, anomalous multiple-route and multiple-step current-voltage (I-V) characteristics at 77 K are observed due to the insertion of a InGaAs quantum well (QW) between the base and collector layers.

Original languageEnglish
Pages (from-to)133-145
Number of pages13
JournalSuperlattices and Microstructures
Volume29
Issue number2
DOIs
Publication statusPublished - 2001 Jan 1

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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