Zinc-delta-doped strained quantum well InGaAs/GaAs p-channel heterostructure field-effect transistor (HFET) grown by low-pressure metalorganic chemical vapor deposition has been realized. In terms of using the zinc-delta, doping technique by interrupting the growth, high concentration is carried out. The influence of spacer layer thickness on two-dimensional hole gas concentration and hole mobility is also studied. The delta-doped p-type trained InGaAs/GaAs HFET with 8 nm spacer layer thickness exhibits extrinsic transconductances of 15 mS/mm at 300 K and 24 mS/mm at 77 K. Secondary-ion mass spectrometry (SIMS) is carried out to confirm the film quality, zinc diffusion profile and sharpness of the proposed structures. Due to the smaller mobility difference in InGaAs/GaAs than in using AlGaAs barriers, the gate voltage swing in the p-channel delta-doped InGaAs/GaAs HFET exhibits a value about 1.7 V. Consequently, a wider linear amplifier application is expected in the present device.
|Number of pages||5|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||4 A|
|Publication status||Published - 1996 Apr|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)