TY - JOUR
T1 - Study of zinc-delta-doped strained quantum well InGaAs/GaAs p-channel heterostructure field-effect transistors
AU - Hsu, Rong Tay
AU - Hsu, Wei Chou
AU - Wang, Jiann Shiun
AU - Kao, Ming Jer
AU - Wu, Yu Huei
AU - Su, Jan Shing
PY - 1996/4
Y1 - 1996/4
N2 - Zinc-delta-doped strained quantum well InGaAs/GaAs p-channel heterostructure field-effect transistor (HFET) grown by low-pressure metalorganic chemical vapor deposition has been realized. In terms of using the zinc-delta, doping technique by interrupting the growth, high concentration is carried out. The influence of spacer layer thickness on two-dimensional hole gas concentration and hole mobility is also studied. The delta-doped p-type trained InGaAs/GaAs HFET with 8 nm spacer layer thickness exhibits extrinsic transconductances of 15 mS/mm at 300 K and 24 mS/mm at 77 K. Secondary-ion mass spectrometry (SIMS) is carried out to confirm the film quality, zinc diffusion profile and sharpness of the proposed structures. Due to the smaller mobility difference in InGaAs/GaAs than in using AlGaAs barriers, the gate voltage swing in the p-channel delta-doped InGaAs/GaAs HFET exhibits a value about 1.7 V. Consequently, a wider linear amplifier application is expected in the present device.
AB - Zinc-delta-doped strained quantum well InGaAs/GaAs p-channel heterostructure field-effect transistor (HFET) grown by low-pressure metalorganic chemical vapor deposition has been realized. In terms of using the zinc-delta, doping technique by interrupting the growth, high concentration is carried out. The influence of spacer layer thickness on two-dimensional hole gas concentration and hole mobility is also studied. The delta-doped p-type trained InGaAs/GaAs HFET with 8 nm spacer layer thickness exhibits extrinsic transconductances of 15 mS/mm at 300 K and 24 mS/mm at 77 K. Secondary-ion mass spectrometry (SIMS) is carried out to confirm the film quality, zinc diffusion profile and sharpness of the proposed structures. Due to the smaller mobility difference in InGaAs/GaAs than in using AlGaAs barriers, the gate voltage swing in the p-channel delta-doped InGaAs/GaAs HFET exhibits a value about 1.7 V. Consequently, a wider linear amplifier application is expected in the present device.
UR - http://www.scopus.com/inward/record.url?scp=0030121680&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0030121680&partnerID=8YFLogxK
U2 - 10.1143/jjap.35.2085
DO - 10.1143/jjap.35.2085
M3 - Article
AN - SCOPUS:0030121680
VL - 35
SP - 2085
EP - 2089
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4 A
ER -