Study on Amorphous InGaZnO thin film transistors optimized by oxygen neutral beam treatment

C. H. Wu, K. M. Chang, Y. M. Chen, B. W. Huang, Y. X. Zhang, S. Samukawa, S. Noda, Y. M. Li, S. J. Wang, B. J. Shih, K. M. Chang, C. H. Wu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Amorphous InGaZnO (a-IGZO) is used as TFTs channel layer, it is deposited with atmospheric-pressure PECVD (AP-PECVD). By AP-PECVD, a-IGZO can be deposited without vacuum system, and keep the cost down and applied to large area manufacturing. To further improve the electrical characteristics of atmospheric-pressure deposited a-IGZO (AP-IGZO) TFTs, post processing by re-oxidation (NBRO) is applied to treat on top of AP-IGZO thin film. The investigation shows when the NBRO post-deposited annealing (PDA) power is 400W for 300 seconds, better electrical characteristic is achieved as mobility of 10.78 cm2/Vs, small subthreshold swing of 100 mV/dec, lower off-state leakage current 3.7×10-12 A, and better Ion/Ioff ratio of 2.76×106.

Original languageEnglish
Title of host publicationProceedings of the 2nd International Conference on Communication and Electronics Systems, ICCES 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages517-520
Number of pages4
ISBN (Electronic)9781509050130
DOIs
Publication statusPublished - 2018 Mar 21
Event2nd International Conference on Communication and Electronics Systems, ICCES 2017 - Coimbatore, India
Duration: 2017 Oct 192017 Oct 20

Publication series

NameProceedings of the 2nd International Conference on Communication and Electronics Systems, ICCES 2017
Volume2018-January

Conference

Conference2nd International Conference on Communication and Electronics Systems, ICCES 2017
CountryIndia
CityCoimbatore
Period17-10-1917-10-20

All Science Journal Classification (ASJC) codes

  • Computer Networks and Communications
  • Control and Optimization
  • Modelling and Simulation
  • Instrumentation
  • Hardware and Architecture
  • Signal Processing
  • Electrical and Electronic Engineering
  • Mechanical Engineering

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