Study on contact and channel resistance of pentacene-based ambipolar organic thin-film transistors

Tsung Jun Ho, Guo En Yan, Horng-Long Cheng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, we investigated the electrical characteristics of pentacene-based ambipolar organic thin-film transistors (OTFTs) by modifying the channel length. We fabricated a top contact device structure with sliver as the source and drain electrodes and heavy doped p-type silicon wafer as the gate electrode. The channel length of the pentacene-based ambipolar OTFTs are 50, 100, 250, and 400 μm; the channel width is fixed. The output current of the n-channel and p-channel decreases with increasing channel length. The saturated mobility and threshold voltage of both channels increase with the increase in channel length. The increase rate of saturated mobility and threshold voltage of the n-channel is larger than that of the p-channel. The influence of channel length on the electrical properties of the p-channel and n-channel is different. We utilized the gated-transfer length method to study the contact resistance between sliver and pentacene and the channel resistance of pentacene. Contact and channel resistance decrease with the increase in gate voltage in the saturation region. The total resistance of pentacene-based ambipolar OTFTs increases with channel length at a fixed gate voltage. However, n-channel total resistance has stronger gate voltage and channel length dependence than p-channel total resistance. This result reveals that electron transport in the device channel requires a larger driving voltage than in the hole. Selecting a suitable channel length is critical to obtain a well-balanced performance of the dual carriers that transport ambipolar OTFTs and to avoid a large loss in injection barrier.

Original languageEnglish
Title of host publicationOrganic Field-Effect Transistors XIV; and Organic Sensors and Bioelectronics VIII
EditorsIain McCulloch, Ruth Shinar, Luisa Torsi, Oana D. Jurchescu, Ioannis Kymissis
PublisherSPIE
ISBN (Electronic)9781628417340
DOIs
Publication statusPublished - 2015 Jan 1
EventOrganic Field-Effect Transistors XIV; and Organic Sensors and Bioelectronics VIII - San Diego, United States
Duration: 2015 Aug 92015 Aug 12

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume9568
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Other

OtherOrganic Field-Effect Transistors XIV; and Organic Sensors and Bioelectronics VIII
CountryUnited States
CitySan Diego
Period15-08-0915-08-12

All Science Journal Classification (ASJC) codes

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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