Study on crystal defects in epitaxial GaN film by high-order weak-beam electron microscopy

S. Q. Wang; C. P. Liu; H. Q. Ye

doi:10.1016/S1044-5803(99)00073-X

Study on crystal defects in epitaxial GaN film by high-order weak-beam electron microscopy

S. Q. Wang, C. P. Liu, H. Q. Ye

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

Various crystal defects in epitaxial GaN film were studied by high-order bright-field and dark-field electron microscopy. The results revealed that the film is composed of small grains in nano-meter scale. Distinct shapes of the grain boundaries and a great number of threading dislocations were shown in the experimental g/3g weak-beam images. Diffraction contrast analysis verified that the majority of threading dislocations is 1/3<11 2̄0> edge dislocation. A unique (11 2̄ 0) planar defect was observed in the specimen. The defect was identified to have a similar structure to the incipient 1/3[11 2̄ 0] edge dislocation.

Original language	English
Pages (from-to)	385-389
Number of pages	5
Journal	Materials Characterization
Volume	44
Issue number	4
DOIs	https://doi.org/10.1016/S1044-5803(99)00073-X
Publication status	Published - 2000
Event	5th IUMRS International Conference on Advance Materials - Beijing, China Duration: 1999 Jun 13 → 1999 Jun 18

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/S1044-5803(99)00073-X

Cite this

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title = "Study on crystal defects in epitaxial GaN film by high-order weak-beam electron microscopy",

abstract = "Various crystal defects in epitaxial GaN film were studied by high-order bright-field and dark-field electron microscopy. The results revealed that the film is composed of small grains in nano-meter scale. Distinct shapes of the grain boundaries and a great number of threading dislocations were shown in the experimental g/3g weak-beam images. Diffraction contrast analysis verified that the majority of threading dislocations is 1/3<11 {\=2}0> edge dislocation. A unique (11 {\=2} 0) planar defect was observed in the specimen. The defect was identified to have a similar structure to the incipient 1/3[11 {\=2} 0] edge dislocation.",

author = "Wang, {S. Q.} and Liu, {C. P.} and Ye, {H. Q.}",

note = "Funding Information: The authors would like to thank Dr. P. D. Brown for his help in specimen preparation, Prof. C. J. Humphreys for useful discussions. This work was financially supported by the Royal Society of UK under the Royal Fellowship Program and the National Pandeng Research Project (95-Y-41) of China.; 5th IUMRS International Conference on Advance Materials ; Conference date: 13-06-1999 Through 18-06-1999",

year = "2000",

doi = "10.1016/S1044-5803(99)00073-X",

language = "English",

volume = "44",

pages = "385--389",

journal = "Materials Characterization",

issn = "1044-5803",

publisher = "Elsevier Inc.",

number = "4",

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TY - JOUR

T1 - Study on crystal defects in epitaxial GaN film by high-order weak-beam electron microscopy

AU - Wang, S. Q.

AU - Liu, C. P.

AU - Ye, H. Q.

N1 - Funding Information: The authors would like to thank Dr. P. D. Brown for his help in specimen preparation, Prof. C. J. Humphreys for useful discussions. This work was financially supported by the Royal Society of UK under the Royal Fellowship Program and the National Pandeng Research Project (95-Y-41) of China.

PY - 2000

Y1 - 2000

N2 - Various crystal defects in epitaxial GaN film were studied by high-order bright-field and dark-field electron microscopy. The results revealed that the film is composed of small grains in nano-meter scale. Distinct shapes of the grain boundaries and a great number of threading dislocations were shown in the experimental g/3g weak-beam images. Diffraction contrast analysis verified that the majority of threading dislocations is 1/3<11 2̄0> edge dislocation. A unique (11 2̄ 0) planar defect was observed in the specimen. The defect was identified to have a similar structure to the incipient 1/3[11 2̄ 0] edge dislocation.

AB - Various crystal defects in epitaxial GaN film were studied by high-order bright-field and dark-field electron microscopy. The results revealed that the film is composed of small grains in nano-meter scale. Distinct shapes of the grain boundaries and a great number of threading dislocations were shown in the experimental g/3g weak-beam images. Diffraction contrast analysis verified that the majority of threading dislocations is 1/3<11 2̄0> edge dislocation. A unique (11 2̄ 0) planar defect was observed in the specimen. The defect was identified to have a similar structure to the incipient 1/3[11 2̄ 0] edge dislocation.

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UR - http://www.scopus.com/inward/citedby.url?scp=0034171403&partnerID=8YFLogxK

U2 - 10.1016/S1044-5803(99)00073-X

DO - 10.1016/S1044-5803(99)00073-X

M3 - Conference article

AN - SCOPUS:0034171403

SN - 1044-5803

VL - 44

SP - 385

EP - 389

JO - Materials Characterization

JF - Materials Characterization

IS - 4

T2 - 5th IUMRS International Conference on Advance Materials

Y2 - 13 June 1999 through 18 June 1999

ER -

Study on crystal defects in epitaxial GaN film by high-order weak-beam electron microscopy

Abstract

All Science Journal Classification (ASJC) codes

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