TY - JOUR
T1 - Study on crystal defects in epitaxial GaN film by high-order weak-beam electron microscopy
AU - Wang, S. Q.
AU - Liu, C. P.
AU - Ye, H. Q.
N1 - Funding Information:
The authors would like to thank Dr. P. D. Brown for his help in specimen preparation, Prof. C. J. Humphreys for useful discussions. This work was financially supported by the Royal Society of UK under the Royal Fellowship Program and the National Pandeng Research Project (95-Y-41) of China.
PY - 2000
Y1 - 2000
N2 - Various crystal defects in epitaxial GaN film were studied by high-order bright-field and dark-field electron microscopy. The results revealed that the film is composed of small grains in nano-meter scale. Distinct shapes of the grain boundaries and a great number of threading dislocations were shown in the experimental g/3g weak-beam images. Diffraction contrast analysis verified that the majority of threading dislocations is 1/3<11 2̄0> edge dislocation. A unique (11 2̄ 0) planar defect was observed in the specimen. The defect was identified to have a similar structure to the incipient 1/3[11 2̄ 0] edge dislocation.
AB - Various crystal defects in epitaxial GaN film were studied by high-order bright-field and dark-field electron microscopy. The results revealed that the film is composed of small grains in nano-meter scale. Distinct shapes of the grain boundaries and a great number of threading dislocations were shown in the experimental g/3g weak-beam images. Diffraction contrast analysis verified that the majority of threading dislocations is 1/3<11 2̄0> edge dislocation. A unique (11 2̄ 0) planar defect was observed in the specimen. The defect was identified to have a similar structure to the incipient 1/3[11 2̄ 0] edge dislocation.
UR - http://www.scopus.com/inward/record.url?scp=0034171403&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0034171403&partnerID=8YFLogxK
U2 - 10.1016/S1044-5803(99)00073-X
DO - 10.1016/S1044-5803(99)00073-X
M3 - Conference article
AN - SCOPUS:0034171403
SN - 1044-5803
VL - 44
SP - 385
EP - 389
JO - Materials Characterization
JF - Materials Characterization
IS - 4
T2 - 5th IUMRS International Conference on Advance Materials
Y2 - 13 June 1999 through 18 June 1999
ER -