Study on crystal defects in epitaxial GaN film by high-order weak-beam electron microscopy

S. Q. Wang, Chuan-Pu Liu, H. Q. Ye

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

Various crystal defects in epitaxial GaN film were studied by high-order bright-field and dark-field electron microscopy. The results revealed that the film is composed of small grains in nano-meter scale. Distinct shapes of the grain boundaries and a great number of threading dislocations were shown in the experimental g/3g weak-beam images. Diffraction contrast analysis verified that the majority of threading dislocations is 1/3<11 2̄0> edge dislocation. A unique (11 2̄ 0) planar defect was observed in the specimen. The defect was identified to have a similar structure to the incipient 1/3[11 2̄ 0] edge dislocation.

Original languageEnglish
Pages (from-to)385-389
Number of pages5
JournalMaterials Characterization
Volume44
Issue number4
DOIs
Publication statusPublished - 2000 Jan 1
Event5th IUMRS International Conference on Advance Materials - Beijing, China
Duration: 1999 Jun 131999 Jun 18

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Edge dislocations
Crystal defects
Epitaxial films
edge dislocations
Dislocations (crystals)
crystal defects
Electron microscopy
electron microscopy
Defects
defects
Grain boundaries
grain boundaries
Diffraction
diffraction

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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abstract = "Various crystal defects in epitaxial GaN film were studied by high-order bright-field and dark-field electron microscopy. The results revealed that the film is composed of small grains in nano-meter scale. Distinct shapes of the grain boundaries and a great number of threading dislocations were shown in the experimental g/3g weak-beam images. Diffraction contrast analysis verified that the majority of threading dislocations is 1/3<11 2̄0> edge dislocation. A unique (11 2̄ 0) planar defect was observed in the specimen. The defect was identified to have a similar structure to the incipient 1/3[11 2̄ 0] edge dislocation.",
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Study on crystal defects in epitaxial GaN film by high-order weak-beam electron microscopy. / Wang, S. Q.; Liu, Chuan-Pu; Ye, H. Q.

In: Materials Characterization, Vol. 44, No. 4, 01.01.2000, p. 385-389.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Study on crystal defects in epitaxial GaN film by high-order weak-beam electron microscopy

AU - Wang, S. Q.

AU - Liu, Chuan-Pu

AU - Ye, H. Q.

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N2 - Various crystal defects in epitaxial GaN film were studied by high-order bright-field and dark-field electron microscopy. The results revealed that the film is composed of small grains in nano-meter scale. Distinct shapes of the grain boundaries and a great number of threading dislocations were shown in the experimental g/3g weak-beam images. Diffraction contrast analysis verified that the majority of threading dislocations is 1/3<11 2̄0> edge dislocation. A unique (11 2̄ 0) planar defect was observed in the specimen. The defect was identified to have a similar structure to the incipient 1/3[11 2̄ 0] edge dislocation.

AB - Various crystal defects in epitaxial GaN film were studied by high-order bright-field and dark-field electron microscopy. The results revealed that the film is composed of small grains in nano-meter scale. Distinct shapes of the grain boundaries and a great number of threading dislocations were shown in the experimental g/3g weak-beam images. Diffraction contrast analysis verified that the majority of threading dislocations is 1/3<11 2̄0> edge dislocation. A unique (11 2̄ 0) planar defect was observed in the specimen. The defect was identified to have a similar structure to the incipient 1/3[11 2̄ 0] edge dislocation.

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