Study on dc characteristics of an interesting InP/InGaAs tunneling-emitter bipolar transistor with double heterostructures

Chun Yuan Chen; Wen Huei Chiou; Chih Hung Yen; Hung Ming Chuang; Jing Yuh Chen; Chin Chuan Cheng; Wen Chau Liu

doi:10.1116/1.1532027

Study on dc characteristics of an interesting InP/InGaAs tunneling-emitter bipolar transistor with double heterostructures

Chun Yuan Chen, Wen Huei Chiou, Chih Hung Yen, Hung Ming Chuang, Jing Yuh Chen, Chin Chuan Cheng, Wen Chau Liu

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

An interesting InP/InGaAs TEBT with double heterostructures was fabricated and studied. Temperature-dependent two- and three-terminal characteristics were detailed. Based on the use of an InP collector, the large breakdown voltage was obtained. Both of the common-emitter and common-base breakdown voltages of the studied device are higher than 10 V. Due to the use of the δ-doping sheet and spacer, the elimination of knee-shaped characteristics and near unity ideality factors of collector and base currents were found. Furthermore, the dc current gain of the studied TEBT devices was improved and the relatively stable temperature-dependent properties were obtained. The variation rates of current gains were only about 7.4%, 8.1%, 18.9%, and 24.8% at collector currents of I_c=60, 6, 0.6, and 0.06 mA.

Original language	English
Pages (from-to)	82-86
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	21
Issue number	1 SPEC.
DOIs	https://doi.org/10.1116/1.1532027
Publication status	Published - 2003 Jan

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.1532027

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@article{29cb7f045cd745c1bcc3068266626fbf,

title = "Study on dc characteristics of an interesting InP/InGaAs tunneling-emitter bipolar transistor with double heterostructures",

abstract = "An interesting InP/InGaAs TEBT with double heterostructures was fabricated and studied. Temperature-dependent two- and three-terminal characteristics were detailed. Based on the use of an InP collector, the large breakdown voltage was obtained. Both of the common-emitter and common-base breakdown voltages of the studied device are higher than 10 V. Due to the use of the δ-doping sheet and spacer, the elimination of knee-shaped characteristics and near unity ideality factors of collector and base currents were found. Furthermore, the dc current gain of the studied TEBT devices was improved and the relatively stable temperature-dependent properties were obtained. The variation rates of current gains were only about 7.4%, 8.1%, 18.9%, and 24.8% at collector currents of Ic=60, 6, 0.6, and 0.06 mA.",

author = "Chen, {Chun Yuan} and Chiou, {Wen Huei} and Yen, {Chih Hung} and Chuang, {Hung Ming} and Chen, {Jing Yuh} and Cheng, {Chin Chuan} and Liu, {Wen Chau}",

year = "2003",

month = jan,

doi = "10.1116/1.1532027",

language = "English",

volume = "21",

pages = "82--86",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "1 SPEC.",

}

Study on dc characteristics of an interesting InP/InGaAs tunneling-emitter bipolar transistor with double heterostructures. / Chen, Chun Yuan; Chiou, Wen Huei; Yen, Chih Hung et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 21, No. 1 SPEC., 01.2003, p. 82-86.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Study on dc characteristics of an interesting InP/InGaAs tunneling-emitter bipolar transistor with double heterostructures

AU - Chen, Chun Yuan

AU - Chiou, Wen Huei

AU - Yen, Chih Hung

AU - Chuang, Hung Ming

AU - Chen, Jing Yuh

AU - Cheng, Chin Chuan

AU - Liu, Wen Chau

PY - 2003/1

Y1 - 2003/1

N2 - An interesting InP/InGaAs TEBT with double heterostructures was fabricated and studied. Temperature-dependent two- and three-terminal characteristics were detailed. Based on the use of an InP collector, the large breakdown voltage was obtained. Both of the common-emitter and common-base breakdown voltages of the studied device are higher than 10 V. Due to the use of the δ-doping sheet and spacer, the elimination of knee-shaped characteristics and near unity ideality factors of collector and base currents were found. Furthermore, the dc current gain of the studied TEBT devices was improved and the relatively stable temperature-dependent properties were obtained. The variation rates of current gains were only about 7.4%, 8.1%, 18.9%, and 24.8% at collector currents of Ic=60, 6, 0.6, and 0.06 mA.

AB - An interesting InP/InGaAs TEBT with double heterostructures was fabricated and studied. Temperature-dependent two- and three-terminal characteristics were detailed. Based on the use of an InP collector, the large breakdown voltage was obtained. Both of the common-emitter and common-base breakdown voltages of the studied device are higher than 10 V. Due to the use of the δ-doping sheet and spacer, the elimination of knee-shaped characteristics and near unity ideality factors of collector and base currents were found. Furthermore, the dc current gain of the studied TEBT devices was improved and the relatively stable temperature-dependent properties were obtained. The variation rates of current gains were only about 7.4%, 8.1%, 18.9%, and 24.8% at collector currents of Ic=60, 6, 0.6, and 0.06 mA.

UR - http://www.scopus.com/inward/record.url?scp=0037207689&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037207689&partnerID=8YFLogxK

U2 - 10.1116/1.1532027

DO - 10.1116/1.1532027

M3 - Article

AN - SCOPUS:0037207689

SN - 1071-1023

VL - 21

SP - 82

EP - 86

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 1 SPEC.

ER -

Study on dc characteristics of an interesting InP/InGaAs tunneling-emitter bipolar transistor with double heterostructures

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