An interesting InP/InGaAs TEBT with double heterostructures was fabricated and studied. Temperature-dependent two- and three-terminal characteristics were detailed. Based on the use of an InP collector, the large breakdown voltage was obtained. Both of the common-emitter and common-base breakdown voltages of the studied device are higher than 10 V. Due to the use of the δ-doping sheet and spacer, the elimination of knee-shaped characteristics and near unity ideality factors of collector and base currents were found. Furthermore, the dc current gain of the studied TEBT devices was improved and the relatively stable temperature-dependent properties were obtained. The variation rates of current gains were only about 7.4%, 8.1%, 18.9%, and 24.8% at collector currents of Ic=60, 6, 0.6, and 0.06 mA.
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Issue number||1 SPEC.|
|Publication status||Published - 2003 Jan 1|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering