Study on end-of-range defects induced by Sb implantation

Yi Sheng Lai, J. S. Chen, Y. S. Ho, H. L. Sun, K. B. Huang

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)

Abstract

Extended defects formed by antimony ion implantation in Si(100) was investigated as a function of the implant energy. The implanted layer was examined by cross-sectional electron microscopy (TEM). Post-implantation spike-annealing was also performed from 950°C to 1095°C to examine evolution of defects. From the TEM study, the threshold energy to induce visible defects for Sb implantation was found to be more than 50 keV. A mapping for the location of defects was constructed by TEM and secondary ion mass spectroscopy (SIMS). The end-of-range (EOR) defects, which were possibly formed during the solid phase epitaixy regrowth, were located near the lower bound of the transition region. For 70-keV implantation, extended defects appear at the near-surface and the EOR region. It was observed that the near-surface defects diminished after annealing at more than 1050°C, while the EOR defects became coarsening at 1095°C.

Original languageEnglish
Pages (from-to)249-254
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume792
DOIs
Publication statusPublished - 2003
EventRadiation Effects and Ion-Beam Processing of Materials - Boston, MA., United States
Duration: 2003 Dec 12003 Dec 5

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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