Study on precipitations of fluorine-doped silicon oxide

Jun Wu, Ying Lang Wang, Chuan Pu Liu, Shih Chieh Chang, Cheng Tzu Kuo, Chyung Ay

Research output: Contribution to journalConference article

9 Citations (Scopus)

Abstract

Precipitation on fluorine-doped silicon oxide film (SiOF) was observed while exposure to air for a prolonged period of time (>4 h). Most of the precipitates are less than 1 μm and clustered at wafer center. Under SEM view, the precipitation shows hexagonal shape, and mainly composed of Si and O. SIMS analysis showed that SiOF films without F precipitates showed leveling F% profile, whereas SIMS result for SiOF films with precipitations shows increasing gradient with depth. In this study, factors affecting the precipitation of SiOF film were investigated. Humidity in environment was found to be one of the essential elements for the onset of precipitation. Process optimization and control methodologies were also investigated for precipitation prevention to provide a more robust and stable SiOF film, hence ensuring the reliability of device performance.

Original languageEnglish
Pages (from-to)599-604
Number of pages6
JournalThin Solid Films
Volume447-448
DOIs
Publication statusPublished - 2004 Jan 30
EventProceedings of the 30th International Conference on Metallurgie - San Diego, CA, United States
Duration: 2002 Apr 282002 May 2

Fingerprint

Fluorine
Silicon oxides
silicon oxides
Oxide films
fluorine
oxide films
Secondary ion mass spectrometry
Precipitates
secondary ion mass spectrometry
precipitates
Precipitation (meteorology)
leveling
Process control
Atmospheric humidity
humidity
Scanning electron microscopy
wafers
methodology
gradients
Air

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Wu, J., Wang, Y. L., Liu, C. P., Chang, S. C., Kuo, C. T., & Ay, C. (2004). Study on precipitations of fluorine-doped silicon oxide. Thin Solid Films, 447-448, 599-604. https://doi.org/10.1016/j.tsf.2003.07.029
Wu, Jun ; Wang, Ying Lang ; Liu, Chuan Pu ; Chang, Shih Chieh ; Kuo, Cheng Tzu ; Ay, Chyung. / Study on precipitations of fluorine-doped silicon oxide. In: Thin Solid Films. 2004 ; Vol. 447-448. pp. 599-604.
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abstract = "Precipitation on fluorine-doped silicon oxide film (SiOF) was observed while exposure to air for a prolonged period of time (>4 h). Most of the precipitates are less than 1 μm and clustered at wafer center. Under SEM view, the precipitation shows hexagonal shape, and mainly composed of Si and O. SIMS analysis showed that SiOF films without F precipitates showed leveling F{\%} profile, whereas SIMS result for SiOF films with precipitations shows increasing gradient with depth. In this study, factors affecting the precipitation of SiOF film were investigated. Humidity in environment was found to be one of the essential elements for the onset of precipitation. Process optimization and control methodologies were also investigated for precipitation prevention to provide a more robust and stable SiOF film, hence ensuring the reliability of device performance.",
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Wu, J, Wang, YL, Liu, CP, Chang, SC, Kuo, CT & Ay, C 2004, 'Study on precipitations of fluorine-doped silicon oxide', Thin Solid Films, vol. 447-448, pp. 599-604. https://doi.org/10.1016/j.tsf.2003.07.029

Study on precipitations of fluorine-doped silicon oxide. / Wu, Jun; Wang, Ying Lang; Liu, Chuan Pu; Chang, Shih Chieh; Kuo, Cheng Tzu; Ay, Chyung.

In: Thin Solid Films, Vol. 447-448, 30.01.2004, p. 599-604.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Study on precipitations of fluorine-doped silicon oxide

AU - Wu, Jun

AU - Wang, Ying Lang

AU - Liu, Chuan Pu

AU - Chang, Shih Chieh

AU - Kuo, Cheng Tzu

AU - Ay, Chyung

PY - 2004/1/30

Y1 - 2004/1/30

N2 - Precipitation on fluorine-doped silicon oxide film (SiOF) was observed while exposure to air for a prolonged period of time (>4 h). Most of the precipitates are less than 1 μm and clustered at wafer center. Under SEM view, the precipitation shows hexagonal shape, and mainly composed of Si and O. SIMS analysis showed that SiOF films without F precipitates showed leveling F% profile, whereas SIMS result for SiOF films with precipitations shows increasing gradient with depth. In this study, factors affecting the precipitation of SiOF film were investigated. Humidity in environment was found to be one of the essential elements for the onset of precipitation. Process optimization and control methodologies were also investigated for precipitation prevention to provide a more robust and stable SiOF film, hence ensuring the reliability of device performance.

AB - Precipitation on fluorine-doped silicon oxide film (SiOF) was observed while exposure to air for a prolonged period of time (>4 h). Most of the precipitates are less than 1 μm and clustered at wafer center. Under SEM view, the precipitation shows hexagonal shape, and mainly composed of Si and O. SIMS analysis showed that SiOF films without F precipitates showed leveling F% profile, whereas SIMS result for SiOF films with precipitations shows increasing gradient with depth. In this study, factors affecting the precipitation of SiOF film were investigated. Humidity in environment was found to be one of the essential elements for the onset of precipitation. Process optimization and control methodologies were also investigated for precipitation prevention to provide a more robust and stable SiOF film, hence ensuring the reliability of device performance.

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