Study on precipitations of fluorine-doped silicon oxide

Jun Wu; Ying Lang Wang; Chuan Pu Liu; Shih Chieh Chang; Cheng Tzu Kuo; Chyung Ay

doi:10.1016/j.tsf.2003.07.029

Study on precipitations of fluorine-doped silicon oxide

Jun Wu, Ying Lang Wang, Chuan Pu Liu, Shih Chieh Chang, Cheng Tzu Kuo, Chyung Ay

Research output: Contribution to journal › Conference article › peer-review

12 Citations (Scopus)

Abstract

Precipitation on fluorine-doped silicon oxide film (SiOF) was observed while exposure to air for a prolonged period of time (>4 h). Most of the precipitates are less than 1 μm and clustered at wafer center. Under SEM view, the precipitation shows hexagonal shape, and mainly composed of Si and O. SIMS analysis showed that SiOF films without F precipitates showed leveling F% profile, whereas SIMS result for SiOF films with precipitations shows increasing gradient with depth. In this study, factors affecting the precipitation of SiOF film were investigated. Humidity in environment was found to be one of the essential elements for the onset of precipitation. Process optimization and control methodologies were also investigated for precipitation prevention to provide a more robust and stable SiOF film, hence ensuring the reliability of device performance.

Original language	English
Pages (from-to)	599-604
Number of pages	6
Journal	Thin Solid Films
Volume	447-448
DOIs	https://doi.org/10.1016/j.tsf.2003.07.029
Publication status	Published - 2004 Jan 30
Event	Proceedings of the 30th International Conference on Metallurgie - San Diego, CA, United States Duration: 2002 Apr 28 → 2002 May 2

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2003.07.029

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title = "Study on precipitations of fluorine-doped silicon oxide",

abstract = "Precipitation on fluorine-doped silicon oxide film (SiOF) was observed while exposure to air for a prolonged period of time (>4 h). Most of the precipitates are less than 1 μm and clustered at wafer center. Under SEM view, the precipitation shows hexagonal shape, and mainly composed of Si and O. SIMS analysis showed that SiOF films without F precipitates showed leveling F% profile, whereas SIMS result for SiOF films with precipitations shows increasing gradient with depth. In this study, factors affecting the precipitation of SiOF film were investigated. Humidity in environment was found to be one of the essential elements for the onset of precipitation. Process optimization and control methodologies were also investigated for precipitation prevention to provide a more robust and stable SiOF film, hence ensuring the reliability of device performance.",

author = "Jun Wu and Wang, {Ying Lang} and Liu, {Chuan Pu} and Chang, {Shih Chieh} and Kuo, {Cheng Tzu} and Chyung Ay",

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doi = "10.1016/j.tsf.2003.07.029",

language = "English",

volume = "447-448",

pages = "599--604",

journal = "Thin Solid Films",

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note = "Proceedings of the 30th International Conference on Metallurgie ; Conference date: 28-04-2002 Through 02-05-2002",

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TY - JOUR

T1 - Study on precipitations of fluorine-doped silicon oxide

AU - Wu, Jun

AU - Wang, Ying Lang

AU - Liu, Chuan Pu

AU - Chang, Shih Chieh

AU - Kuo, Cheng Tzu

AU - Ay, Chyung

PY - 2004/1/30

Y1 - 2004/1/30

N2 - Precipitation on fluorine-doped silicon oxide film (SiOF) was observed while exposure to air for a prolonged period of time (>4 h). Most of the precipitates are less than 1 μm and clustered at wafer center. Under SEM view, the precipitation shows hexagonal shape, and mainly composed of Si and O. SIMS analysis showed that SiOF films without F precipitates showed leveling F% profile, whereas SIMS result for SiOF films with precipitations shows increasing gradient with depth. In this study, factors affecting the precipitation of SiOF film were investigated. Humidity in environment was found to be one of the essential elements for the onset of precipitation. Process optimization and control methodologies were also investigated for precipitation prevention to provide a more robust and stable SiOF film, hence ensuring the reliability of device performance.

AB - Precipitation on fluorine-doped silicon oxide film (SiOF) was observed while exposure to air for a prolonged period of time (>4 h). Most of the precipitates are less than 1 μm and clustered at wafer center. Under SEM view, the precipitation shows hexagonal shape, and mainly composed of Si and O. SIMS analysis showed that SiOF films without F precipitates showed leveling F% profile, whereas SIMS result for SiOF films with precipitations shows increasing gradient with depth. In this study, factors affecting the precipitation of SiOF film were investigated. Humidity in environment was found to be one of the essential elements for the onset of precipitation. Process optimization and control methodologies were also investigated for precipitation prevention to provide a more robust and stable SiOF film, hence ensuring the reliability of device performance.

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DO - 10.1016/j.tsf.2003.07.029

M3 - Conference article

AN - SCOPUS:1342302386

SN - 0040-6090

VL - 447-448

SP - 599

EP - 604

JO - Thin Solid Films

JF - Thin Solid Films

T2 - Proceedings of the 30th International Conference on Metallurgie

Y2 - 28 April 2002 through 2 May 2002

ER -

Study on precipitations of fluorine-doped silicon oxide

Abstract

All Science Journal Classification (ASJC) codes

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