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Study on the rapid thermal annealing process of low-energy arsenic and phosphorous ion-implanted silicon by reflective second harmonic generation
Kuang-Yao Lo
Department of Physics
Research output
:
Contribution to journal
›
Article
›
peer-review
13
Citations (Scopus)
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Dive into the research topics of 'Study on the rapid thermal annealing process of low-energy arsenic and phosphorous ion-implanted silicon by reflective second harmonic generation'. Together they form a unique fingerprint.
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Engineering & Materials Science
Rapid thermal annealing
100%
Harmonic generation
97%
Arsenic
96%
Ions
59%
Silicon
51%
Atoms
33%
Secondary ion mass spectrometry
24%
Activation energy
16%
Temperature
6%
Chemical Compounds
Rapid Thermal Annealing
96%
Implanted Ion
92%
Second-Harmonic Generation
74%
Dipole
32%
Implant
32%
Arsenic Atom
24%
Secondary Ion Mass Spectroscopy
17%
Orbital
13%
Reaction Activation Energy
11%
Surface
10%
Diffusion
10%
Energy
7%
Physics & Astronomy
arsenic
70%
harmonic generations
57%
implantation
43%
annealing
39%
silicon
34%
ions
30%
dipoles
23%
energy
19%
secondary ion mass spectrometry
16%
atoms
16%
activation energy
11%
orbitals
11%
temperature
4%