Sub-0.1 μm MOSFET fabrication using 248 nm lithography by resist trimming technique in high density plasmas

Chian Yuh Sin, Loh Wei Loong, Bing Hung Chen, Yujie, Pradeep Yelehanka, Lap Chan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

A resist trimming technique using oxygen containing gas mixture in high-density plasma is presented that allows the fabrication of sub-0.1 μm MOSFET with 248 nm lithography. The trimming step is done in-situ as part of the gate etch processes. The effect of the important etcher parameters such as RF source power, bias voltage, O2 gas flow, reactor pressure and over-etch percentage on the process characteristics such as trim rate, uniformity and microloading has been investigated by means of statistically designed experiments. These trends have been applied to the process optimization for a single layer photoresist, binary masks and conventional 248 nm illumination to fabricate 0.08 μm gate electrodes. Anisotropic profiles of polysilicon lines can be obtained with the trimmed resist as a mask. The effect of the trimming step on critical dimension control is quantified, and the electrical performance of the transistors is presented. The resist trimming process was found to be controllable and reproducible.

Original languageEnglish
Title of host publication2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings
EditorsHiroshi Iwai, Paul Yu, Bing-Zong Li, Guo-Ping Ru, Xin-Ping Qu
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages460-463
Number of pages4
ISBN (Electronic)0780365208, 9780780365209
DOIs
Publication statusPublished - 2001 Jan 1
Event6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Shanghai, China
Duration: 2001 Oct 222001 Oct 25

Publication series

Name2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings
Volume1

Other

Other6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001
CountryChina
CityShanghai
Period01-10-2201-10-25

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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