Sub-40nm V-groove MOSFETs

J. Appenzeller; R. Martel; Ph Avouris; J. Knoch; Y. Lu; K. L. Wang; J. Scholvin; J. A. Del Alamo; P. Rice; P. Solomon

Sub-40nm V-groove MOSFETs

J. Appenzeller, R. Martel, Ph Avouris, J. Knoch, Y. Lu, K. L. Wang, J. Scholvin, J. A. Del Alamo, P. Rice, P. Solomon

College of Electrical Engineering and Computer Science

Research output: Contribution to conference › Paper › peer-review

1 Citation (Scopus)

Abstract

The V-groove MOSFETs capable of generating high performance transistor characteristics of sub-40 nm was demonstrated. MOSFETs with source and drain separation down to L_g=36 nm exhibiting a definite state of electric characteristics were presented. The output characteristics of 36 nm V-groove MOSFET, the corresponding sub-threshold and transfer characteristics as well as characteristics for V-groove openings were discussed. The intrinsic output resistance was also calculated.

Original language	English
Pages	95-96
Number of pages	2
Publication status	Published - 2001
Event	Device Research Conference (DRC) - Notre Dame, IN, United States Duration: 2001 Jun 25 → 2001 Jun 27

Conference

Conference	Device Research Conference (DRC)
Country/Territory	United States
City	Notre Dame, IN
Period	01-06-25 → 01-06-27

All Science Journal Classification (ASJC) codes

Engineering(all)

Cite this

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title = "Sub-40nm V-groove MOSFETs",

abstract = "The V-groove MOSFETs capable of generating high performance transistor characteristics of sub-40 nm was demonstrated. MOSFETs with source and drain separation down to Lg=36 nm exhibiting a definite state of electric characteristics were presented. The output characteristics of 36 nm V-groove MOSFET, the corresponding sub-threshold and transfer characteristics as well as characteristics for V-groove openings were discussed. The intrinsic output resistance was also calculated.",

author = "J. Appenzeller and R. Martel and Ph Avouris and J. Knoch and Y. Lu and Wang, {K. L.} and J. Scholvin and {Del Alamo}, {J. A.} and P. Rice and P. Solomon",

year = "2001",

language = "English",

pages = "95--96",

}

TY - CONF

T1 - Sub-40nm V-groove MOSFETs

AU - Appenzeller, J.

AU - Martel, R.

AU - Avouris, Ph

AU - Knoch, J.

AU - Lu, Y.

AU - Wang, K. L.

AU - Scholvin, J.

AU - Del Alamo, J. A.

AU - Rice, P.

AU - Solomon, P.

PY - 2001

Y1 - 2001

N2 - The V-groove MOSFETs capable of generating high performance transistor characteristics of sub-40 nm was demonstrated. MOSFETs with source and drain separation down to Lg=36 nm exhibiting a definite state of electric characteristics were presented. The output characteristics of 36 nm V-groove MOSFET, the corresponding sub-threshold and transfer characteristics as well as characteristics for V-groove openings were discussed. The intrinsic output resistance was also calculated.

AB - The V-groove MOSFETs capable of generating high performance transistor characteristics of sub-40 nm was demonstrated. MOSFETs with source and drain separation down to Lg=36 nm exhibiting a definite state of electric characteristics were presented. The output characteristics of 36 nm V-groove MOSFET, the corresponding sub-threshold and transfer characteristics as well as characteristics for V-groove openings were discussed. The intrinsic output resistance was also calculated.

UR - http://www.scopus.com/inward/record.url?scp=0034860349&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034860349&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0034860349

SP - 95

EP - 96

T2 - Device Research Conference (DRC)

Y2 - 25 June 2001 through 27 June 2001

ER -

Sub-40nm V-groove MOSFETs

Abstract

Conference

All Science Journal Classification (ASJC) codes

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