Sub-band-gap photocurrent of an individual defective gan nanowire measured by conductive atomic force microscopy

Wen Huei Chu, Hsin Wei Chiang, Chuan-Pu Liu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The sub-band-gap photocurrent of an individual defective GaN nanowire was measured using conductive atomic force microscopy (C-AFM) with the conductive tip under illumination. The intrinsic defects introduced additional states in the band-gap and assisted the inelastic tunneling process, resulting in negative differential resistance (NDR). The sample exhibited a photocurrent response at photon energies below the band gap energy of GaN due to the high density of defects in the nanowire. The cathodoluminescence spectrum of the GaN nanowire confirms that the defects give rise to sub-band-gap emissions. The mechanisms of the sub-band-gap photocurrent are discussed.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume14
Issue number7
DOIs
Publication statusPublished - 2011 Jun 29

Fingerprint

Photocurrents
Nanowires
photocurrents
Atomic force microscopy
Energy gap
nanowires
atomic force microscopy
Defects
defects
Cathodoluminescence
cathodoluminescence
Photons
Lighting
illumination
photons
energy

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrical and Electronic Engineering
  • Electrochemistry

Cite this

@article{e378cc32b19e49b09a5def6b08a41ab4,
title = "Sub-band-gap photocurrent of an individual defective gan nanowire measured by conductive atomic force microscopy",
abstract = "The sub-band-gap photocurrent of an individual defective GaN nanowire was measured using conductive atomic force microscopy (C-AFM) with the conductive tip under illumination. The intrinsic defects introduced additional states in the band-gap and assisted the inelastic tunneling process, resulting in negative differential resistance (NDR). The sample exhibited a photocurrent response at photon energies below the band gap energy of GaN due to the high density of defects in the nanowire. The cathodoluminescence spectrum of the GaN nanowire confirms that the defects give rise to sub-band-gap emissions. The mechanisms of the sub-band-gap photocurrent are discussed.",
author = "Chu, {Wen Huei} and Chiang, {Hsin Wei} and Chuan-Pu Liu",
year = "2011",
month = "6",
day = "29",
doi = "10.1149/1.3586793",
language = "English",
volume = "14",
journal = "Electrochemical and Solid-State Letters",
issn = "1099-0062",
publisher = "Electrochemical Society, Inc.",
number = "7",

}

Sub-band-gap photocurrent of an individual defective gan nanowire measured by conductive atomic force microscopy. / Chu, Wen Huei; Chiang, Hsin Wei; Liu, Chuan-Pu.

In: Electrochemical and Solid-State Letters, Vol. 14, No. 7, 29.06.2011.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Sub-band-gap photocurrent of an individual defective gan nanowire measured by conductive atomic force microscopy

AU - Chu, Wen Huei

AU - Chiang, Hsin Wei

AU - Liu, Chuan-Pu

PY - 2011/6/29

Y1 - 2011/6/29

N2 - The sub-band-gap photocurrent of an individual defective GaN nanowire was measured using conductive atomic force microscopy (C-AFM) with the conductive tip under illumination. The intrinsic defects introduced additional states in the band-gap and assisted the inelastic tunneling process, resulting in negative differential resistance (NDR). The sample exhibited a photocurrent response at photon energies below the band gap energy of GaN due to the high density of defects in the nanowire. The cathodoluminescence spectrum of the GaN nanowire confirms that the defects give rise to sub-band-gap emissions. The mechanisms of the sub-band-gap photocurrent are discussed.

AB - The sub-band-gap photocurrent of an individual defective GaN nanowire was measured using conductive atomic force microscopy (C-AFM) with the conductive tip under illumination. The intrinsic defects introduced additional states in the band-gap and assisted the inelastic tunneling process, resulting in negative differential resistance (NDR). The sample exhibited a photocurrent response at photon energies below the band gap energy of GaN due to the high density of defects in the nanowire. The cathodoluminescence spectrum of the GaN nanowire confirms that the defects give rise to sub-band-gap emissions. The mechanisms of the sub-band-gap photocurrent are discussed.

UR - http://www.scopus.com/inward/record.url?scp=79959543966&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79959543966&partnerID=8YFLogxK

U2 - 10.1149/1.3586793

DO - 10.1149/1.3586793

M3 - Article

VL - 14

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

SN - 1099-0062

IS - 7

ER -