Abstract
Variations of the channel resistance of a AlGaN/GaN high electron mobilities transistor caused by subsequently incident photons with sub-bandgap energies after ultraviolet light-induced changes became stable were studied. Temperature-dependent measurements yielded a 0.342 eV thermal activation energy and wavelength-varying measurements yielded a 0.8 eV cut-off photon energy. The ratio between the two values is very close to the theoretical value of the ratio between the valence and conduction band discontinuities. A qualitative description about the transports of excess carriers through the band discontinuities, is also proposed and consistent with the experimental results.
Original language | English |
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Pages (from-to) | 112-115 |
Number of pages | 4 |
Journal | IEEE Journal of Quantum Electronics |
Volume | 46 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2010 |
All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering