Sub-bandgap laser light-induced excess carrier transport between surface states and two-dimensional electron gas channel in AlGaN/GaN structure

Yun Chorng Chang, Jinn Kong Sheu, Yun Li Li

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Variations of the channel resistance of a AlGaN/GaN high electron mobilities transistor caused by subsequently incident photons with sub-bandgap energies after ultraviolet light-induced changes became stable were studied. Temperature-dependent measurements yielded a 0.342 eV thermal activation energy and wavelength-varying measurements yielded a 0.8 eV cut-off photon energy. The ratio between the two values is very close to the theoretical value of the ratio between the valence and conduction band discontinuities. A qualitative description about the transports of excess carriers through the band discontinuities, is also proposed and consistent with the experimental results.

Original languageEnglish
Pages (from-to)112-115
Number of pages4
JournalIEEE Journal of Quantum Electronics
Volume46
Issue number1
DOIs
Publication statusPublished - 2010 Mar 22

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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