Subcritical Crack Growth in Sintered Silicon Nitride Exhibiting a Rising R‐Curve

Akira Okada; Naoto Hirosaki; Masahiro Yoshimura

doi:10.1111/j.1151-2916.1990.tb05274.x

Subcritical Crack Growth in Sintered Silicon Nitride Exhibiting a Rising R‐Curve

Akira Okada
, Naoto Hirosaki
, Masahiro Yoshimura

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

Subscritical crack growth of sintered silicon nitride was analyzed in terms of the R‐curve. Provided that the stress intensity at the crack tip governs the subcritical crack‐growth velocity, the K_I–V relationship of sintered silicon nitride exhibiting a rising R‐curve is shown to shift to the high‐K_I region as the crack advances.

Original language	English
Pages (from-to)	2095-2096
Number of pages	2
Journal	Journal of the American Ceramic Society
Volume	73
Issue number	7
DOIs	https://doi.org/10.1111/j.1151-2916.1990.tb05274.x
Publication status	Published - 1990 Jul

All Science Journal Classification (ASJC) codes

Ceramics and Composites
Materials Chemistry

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10.1111/j.1151-2916.1990.tb05274.x

Cite this

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abstract = "Subscritical crack growth of sintered silicon nitride was analyzed in terms of the R‐curve. Provided that the stress intensity at the crack tip governs the subcritical crack‐growth velocity, the KI–V relationship of sintered silicon nitride exhibiting a rising R‐curve is shown to shift to the high‐KI region as the crack advances.",

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AB - Subscritical crack growth of sintered silicon nitride was analyzed in terms of the R‐curve. Provided that the stress intensity at the crack tip governs the subcritical crack‐growth velocity, the KI–V relationship of sintered silicon nitride exhibiting a rising R‐curve is shown to shift to the high‐KI region as the crack advances.

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M3 - Article

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Subcritical Crack Growth in Sintered Silicon Nitride Exhibiting a Rising R‐Curve

Abstract

All Science Journal Classification (ASJC) codes

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