The dielectric constant (κ), leakage current density (JL), and equivalent oxide thickness (EOT) of 12-nm-thick Y2O 3-TiO2 and N2-doped Y2O 3-TiO2 (YON-TiON) libraries were successfully mapped using a combinatorial sputtering system. N2 was determined to enhance these properties dramatically. In addition, the YON-TiON library exhibited excellent stability after four months of exposure to air. A highly promising composition range (60 at%-68 at% of TiO2), which exhibited amorphousness, κ > 30, JL < 10-5 A/cm 2, and an EOT ≤ 1 nm, on the YON-TiON library for highly advanced gate-stacks was efficiently screened.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering