Substantial enhancement of the dielectric properties of amorphous Y 2O3-TiO2 composition spreads through N 2 doping using combinatorial sputtering

Kao Shuo Chang; Hao Che Feng; Chun Lin Chen; Wen Chung Lu

doi:10.1109/TED.2014.2318303

Substantial enhancement of the dielectric properties of amorphous Y ₂O₃-TiO₂ composition spreads through N ₂ doping using combinatorial sputtering

Kao Shuo Chang, Hao Che Feng, Chun Lin Chen, Wen Chung Lu

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The dielectric constant (κ), leakage current density (J_L), and equivalent oxide thickness (EOT) of 12-nm-thick Y₂O ₃-TiO₂ and N₂-doped Y₂O ₃-TiO₂ (YON-TiON) libraries were successfully mapped using a combinatorial sputtering system. N₂ was determined to enhance these properties dramatically. In addition, the YON-TiON library exhibited excellent stability after four months of exposure to air. A highly promising composition range (60 at%-68 at% of TiO₂), which exhibited amorphousness, κ > 30, J_L < 10^-5 A/cm ², and an EOT ≤ 1 nm, on the YON-TiON library for highly advanced gate-stacks was efficiently screened.

Original language	English
Article number	6809211
Pages (from-to)	2125-2129
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	61
Issue number	6
DOIs	https://doi.org/10.1109/TED.2014.2318303
Publication status	Published - 2014 Jun

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2014.2318303

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title = "Substantial enhancement of the dielectric properties of amorphous Y 2O3-TiO2 composition spreads through N 2 doping using combinatorial sputtering",

abstract = "The dielectric constant (κ), leakage current density (JL), and equivalent oxide thickness (EOT) of 12-nm-thick Y2O 3-TiO2 and N2-doped Y2O 3-TiO2 (YON-TiON) libraries were successfully mapped using a combinatorial sputtering system. N2 was determined to enhance these properties dramatically. In addition, the YON-TiON library exhibited excellent stability after four months of exposure to air. A highly promising composition range (60 at%-68 at% of TiO2), which exhibited amorphousness, κ > 30, JL < 10-5 A/cm 2, and an EOT ≤ 1 nm, on the YON-TiON library for highly advanced gate-stacks was efficiently screened.",

author = "Chang, {Kao Shuo} and Feng, {Hao Che} and Chen, {Chun Lin} and Lu, {Wen Chung}",

year = "2014",

month = jun,

doi = "10.1109/TED.2014.2318303",

language = "English",

volume = "61",

pages = "2125--2129",

journal = "IEEE Transactions on Electron Devices",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Substantial enhancement of the dielectric properties of amorphous Y ₂O₃-TiO₂ composition spreads through N ₂ doping using combinatorial sputtering. / Chang, Kao Shuo; Feng, Hao Che; Chen, Chun Lin; Lu, Wen Chung.

In: IEEE Transactions on Electron Devices, Vol. 61, No. 6, 6809211, 06.2014, p. 2125-2129.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Substantial enhancement of the dielectric properties of amorphous Y 2O3-TiO2 composition spreads through N 2 doping using combinatorial sputtering

AU - Chang, Kao Shuo

AU - Feng, Hao Che

AU - Chen, Chun Lin

AU - Lu, Wen Chung

PY - 2014/6

Y1 - 2014/6

N2 - The dielectric constant (κ), leakage current density (JL), and equivalent oxide thickness (EOT) of 12-nm-thick Y2O 3-TiO2 and N2-doped Y2O 3-TiO2 (YON-TiON) libraries were successfully mapped using a combinatorial sputtering system. N2 was determined to enhance these properties dramatically. In addition, the YON-TiON library exhibited excellent stability after four months of exposure to air. A highly promising composition range (60 at%-68 at% of TiO2), which exhibited amorphousness, κ > 30, JL < 10-5 A/cm 2, and an EOT ≤ 1 nm, on the YON-TiON library for highly advanced gate-stacks was efficiently screened.

AB - The dielectric constant (κ), leakage current density (JL), and equivalent oxide thickness (EOT) of 12-nm-thick Y2O 3-TiO2 and N2-doped Y2O 3-TiO2 (YON-TiON) libraries were successfully mapped using a combinatorial sputtering system. N2 was determined to enhance these properties dramatically. In addition, the YON-TiON library exhibited excellent stability after four months of exposure to air. A highly promising composition range (60 at%-68 at% of TiO2), which exhibited amorphousness, κ > 30, JL < 10-5 A/cm 2, and an EOT ≤ 1 nm, on the YON-TiON library for highly advanced gate-stacks was efficiently screened.

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Substantial enhancement of the dielectric properties of amorphous Y ₂O₃-TiO₂ composition spreads through N ₂ doping using combinatorial sputtering

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