Substantial enhancement of the dielectric properties of amorphous Y 2O3-TiO2 composition spreads through N 2 doping using combinatorial sputtering

Kao-Shuo Chang, Hao Che Feng, Chun Lin Chen, Wen Chung Lu

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

The dielectric constant (κ), leakage current density (JL), and equivalent oxide thickness (EOT) of 12-nm-thick Y2O 3-TiO2 and N2-doped Y2O 3-TiO2 (YON-TiON) libraries were successfully mapped using a combinatorial sputtering system. N2 was determined to enhance these properties dramatically. In addition, the YON-TiON library exhibited excellent stability after four months of exposure to air. A highly promising composition range (60 at%-68 at% of TiO2), which exhibited amorphousness, κ > 30, JL < 10-5 A/cm 2, and an EOT ≤ 1 nm, on the YON-TiON library for highly advanced gate-stacks was efficiently screened.

Original languageEnglish
Article number6809211
Pages (from-to)2125-2129
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume61
Issue number6
DOIs
Publication statusPublished - 2014 Jan 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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