Substitutional effect on the transport properties of MnSi

K. M. Sivakumar, Y. K. Kuo, Chin-Shan Lue

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We report the transport properties, including electrical resistivity (ρ) and Seebeck coefficient (S) of Ge-substituted MnSi1-xGex (with x=0, 0.02, 0.05, and 0.10) alloys as a function of temperature between 10 and 300 K. It was found that the partial substitution of Ge at Si site has a surprisingly weak effect on the ferromagnetic transition temperature TC in MnSi, indicating that the negative chemical pressure produced by the substitution of larger ion Ge in place of Si is unable to significantly influence the magnetic ordering. In addition, the temperature-dependent Seebeck coefficient shows similar behaviour for theses alloys, which suggests that the electronic density of states (DOS) of MnSi near the Fermi level is essentially unaffected by Ge substitution for Si.

Original languageEnglish
JournalJournal of Magnetism and Magnetic Materials
Volume304
Issue number1
DOIs
Publication statusPublished - 2006 Sep 1

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Transport properties
Substitution reactions
Seebeck coefficient
transport properties
substitutes
Seebeck effect
Electronic density of states
theses
Fermi level
Heavy ions
Superconducting transition temperature
Magnetization
transition temperature
Temperature
electrical resistivity
temperature
electronics
ions

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Cite this

@article{c94462aed8ca4054a1e2207459a1e289,
title = "Substitutional effect on the transport properties of MnSi",
abstract = "We report the transport properties, including electrical resistivity (ρ) and Seebeck coefficient (S) of Ge-substituted MnSi1-xGex (with x=0, 0.02, 0.05, and 0.10) alloys as a function of temperature between 10 and 300 K. It was found that the partial substitution of Ge at Si site has a surprisingly weak effect on the ferromagnetic transition temperature TC in MnSi, indicating that the negative chemical pressure produced by the substitution of larger ion Ge in place of Si is unable to significantly influence the magnetic ordering. In addition, the temperature-dependent Seebeck coefficient shows similar behaviour for theses alloys, which suggests that the electronic density of states (DOS) of MnSi near the Fermi level is essentially unaffected by Ge substitution for Si.",
author = "Sivakumar, {K. M.} and Kuo, {Y. K.} and Chin-Shan Lue",
year = "2006",
month = "9",
day = "1",
doi = "10.1016/j.jmmm.2006.02.066",
language = "English",
volume = "304",
journal = "Journal of Magnetism and Magnetic Materials",
issn = "0304-8853",
publisher = "Elsevier",
number = "1",

}

Substitutional effect on the transport properties of MnSi. / Sivakumar, K. M.; Kuo, Y. K.; Lue, Chin-Shan.

In: Journal of Magnetism and Magnetic Materials, Vol. 304, No. 1, 01.09.2006.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Substitutional effect on the transport properties of MnSi

AU - Sivakumar, K. M.

AU - Kuo, Y. K.

AU - Lue, Chin-Shan

PY - 2006/9/1

Y1 - 2006/9/1

N2 - We report the transport properties, including electrical resistivity (ρ) and Seebeck coefficient (S) of Ge-substituted MnSi1-xGex (with x=0, 0.02, 0.05, and 0.10) alloys as a function of temperature between 10 and 300 K. It was found that the partial substitution of Ge at Si site has a surprisingly weak effect on the ferromagnetic transition temperature TC in MnSi, indicating that the negative chemical pressure produced by the substitution of larger ion Ge in place of Si is unable to significantly influence the magnetic ordering. In addition, the temperature-dependent Seebeck coefficient shows similar behaviour for theses alloys, which suggests that the electronic density of states (DOS) of MnSi near the Fermi level is essentially unaffected by Ge substitution for Si.

AB - We report the transport properties, including electrical resistivity (ρ) and Seebeck coefficient (S) of Ge-substituted MnSi1-xGex (with x=0, 0.02, 0.05, and 0.10) alloys as a function of temperature between 10 and 300 K. It was found that the partial substitution of Ge at Si site has a surprisingly weak effect on the ferromagnetic transition temperature TC in MnSi, indicating that the negative chemical pressure produced by the substitution of larger ion Ge in place of Si is unable to significantly influence the magnetic ordering. In addition, the temperature-dependent Seebeck coefficient shows similar behaviour for theses alloys, which suggests that the electronic density of states (DOS) of MnSi near the Fermi level is essentially unaffected by Ge substitution for Si.

UR - http://www.scopus.com/inward/record.url?scp=33646863259&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33646863259&partnerID=8YFLogxK

U2 - 10.1016/j.jmmm.2006.02.066

DO - 10.1016/j.jmmm.2006.02.066

M3 - Article

VL - 304

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

SN - 0304-8853

IS - 1

ER -