TY - JOUR
T1 - Substrate-dependant chemical stability and conductivity of LaNiO 3 - X thin films
AU - Hsiao, Chun Lung
AU - Qi, Xiaoding
N1 - Funding Information:
This work was supported by the National Science Council of Taiwan under the grant number: 99-2221-E-006-129-MY3 , and by the National Cheng Kung University via the Top University Project.
PY - 2013/2/1
Y1 - 2013/2/1
N2 - This work studies the chemical stability and the changes of structure and electrical conductivity of LaNiO3 - x films under the low oxygen partial pressure (pO2) atmosphere. Polycrystalline and epitaxial LaNiO3 - x films were grown on a number of substrates including Si, LaAlO3 and SrTiO3 by sol-gel method. A range of structural and electrical characterizations were carried out for the grown films. The results showed that the chemical stability and oxygen stoichiometry of the LaNiO3 - x films were substrate-dependent, as well as influenced by the preparation process. The compressive strain introduced by the heteroepitaxial growth helped the films to keep a higher oxygen stoichiometry and therefore showed a higher conductivity than the polycrystalline and stretched epitaxial films. The epitaxial films, in particular under the tensile strain, showed a higher stability with a slower oxygen loss rate in vacuum at high temperature.
AB - This work studies the chemical stability and the changes of structure and electrical conductivity of LaNiO3 - x films under the low oxygen partial pressure (pO2) atmosphere. Polycrystalline and epitaxial LaNiO3 - x films were grown on a number of substrates including Si, LaAlO3 and SrTiO3 by sol-gel method. A range of structural and electrical characterizations were carried out for the grown films. The results showed that the chemical stability and oxygen stoichiometry of the LaNiO3 - x films were substrate-dependent, as well as influenced by the preparation process. The compressive strain introduced by the heteroepitaxial growth helped the films to keep a higher oxygen stoichiometry and therefore showed a higher conductivity than the polycrystalline and stretched epitaxial films. The epitaxial films, in particular under the tensile strain, showed a higher stability with a slower oxygen loss rate in vacuum at high temperature.
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U2 - 10.1016/j.tsf.2012.05.049
DO - 10.1016/j.tsf.2012.05.049
M3 - Article
AN - SCOPUS:84873704578
SN - 0040-6090
VL - 529
SP - 356
EP - 359
JO - Thin Solid Films
JF - Thin Solid Films
ER -