Subthreshold characteristics and high-frequency performance in InAlAs/InGaAs MHEMT with a liquid phase oxidized InAlAs gate

Kuan Wei Lee, Kai Lin Lee, Xian Zheng Lin, Chao Hsien Tu, Yeong Her Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The oxidation of InAlAs and its application to 0.65 um InAlAs/InGaAs metal-oxide-semiconductor metamorphic high electron mobility transistors (MOS-MHEMTs) are demonstrated in this study. After the highly selective gate recessing of InGaAs/InAlAs using citric buffer etchant, the gate dielectric is obtained directly by oxidizing the InAlAs layer in a liquid phase solution near room temperature. As compared to its counterpart MHEMT, the studied MOS-MHEMT exhibits a larger gate bias operation, higher breakdown voltage, lower subthreshold current, improved gate leakage current with the effectively suppressed impact ionization effect, and improved RF performance.

Original languageEnglish
Title of host publicationICSICT-2006
Subtitle of host publication2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
PublisherIEEE Computer Society
Pages881-883
Number of pages3
ISBN (Print)1424401615, 9781424401611
DOIs
Publication statusPublished - 2006 Jan 1
EventICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
Duration: 2006 Oct 232006 Oct 26

Publication series

NameICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Other

OtherICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
CountryChina
CityShanghai
Period06-10-2306-10-26

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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