Subthreshold Kink Effect Revisited and Optimized for Si Nanowire MOSFETs

Chun Yu Chen; Jyi Tsong Lin; Meng-Hsueh Chiang

doi:10.1109/TED.2015.2512660

Subthreshold Kink Effect Revisited and Optimized for Si Nanowire MOSFETs

Chun Yu Chen, Jyi Tsong Lin, Meng-Hsueh Chiang

Research output: Contribution to journal › Article

6 Citations (Scopus)

Abstract

A device design technique for boosting nanowire MOSFET performance beyond a 10-nm technology node is proposed using physical modeling and 3-D numerical simulation. The revisited subthreshold kink effect improves the transistor ON-OFF current ratio and is achievable with supply bias lower than 1 V. The proposed technique overcomes the fundamental and thermal voltage-limited subthreshold swing (SS). An optimized device design methodology to exploit the lowered SS is provided as well.

Original language	English
Article number	7383277
Pages (from-to)	903-909
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	63
Issue number	3
DOIs	https://doi.org/10.1109/TED.2015.2512660
Publication status	Published - 2016 Mar 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2015.2512660

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Chen, C. Y., Lin, J. T., & Chiang, M-H. (2016). Subthreshold Kink Effect Revisited and Optimized for Si Nanowire MOSFETs. IEEE Transactions on Electron Devices, 63(3), 903-909. [7383277]. https://doi.org/10.1109/TED.2015.2512660

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