Subthreshold Kink Effect Revisited and Optimized for Si Nanowire MOSFETs

Chun Yu Chen; Jyi Tsong Lin; Meng Hsueh Chiang

doi:10.1109/TED.2015.2512660

Subthreshold Kink Effect Revisited and Optimized for Si Nanowire MOSFETs

Chun Yu Chen, Jyi Tsong Lin, Meng Hsueh Chiang

Doctoral Degree Program on Nano-Integrated-Circuit Engineering

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

A device design technique for boosting nanowire MOSFET performance beyond a 10-nm technology node is proposed using physical modeling and 3-D numerical simulation. The revisited subthreshold kink effect improves the transistor ON-OFF current ratio and is achievable with supply bias lower than 1 V. The proposed technique overcomes the fundamental and thermal voltage-limited subthreshold swing (SS). An optimized device design methodology to exploit the lowered SS is provided as well.

Original language	English
Article number	7383277
Pages (from-to)	903-909
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	63
Issue number	3
DOIs	https://doi.org/10.1109/TED.2015.2512660
Publication status	Published - 2016 Mar

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2015.2512660

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abstract = "A device design technique for boosting nanowire MOSFET performance beyond a 10-nm technology node is proposed using physical modeling and 3-D numerical simulation. The revisited subthreshold kink effect improves the transistor ON-OFF current ratio and is achievable with supply bias lower than 1 V. The proposed technique overcomes the fundamental and thermal voltage-limited subthreshold swing (SS). An optimized device design methodology to exploit the lowered SS is provided as well.",

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AB - A device design technique for boosting nanowire MOSFET performance beyond a 10-nm technology node is proposed using physical modeling and 3-D numerical simulation. The revisited subthreshold kink effect improves the transistor ON-OFF current ratio and is achievable with supply bias lower than 1 V. The proposed technique overcomes the fundamental and thermal voltage-limited subthreshold swing (SS). An optimized device design methodology to exploit the lowered SS is provided as well.

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Subthreshold Kink Effect Revisited and Optimized for Si Nanowire MOSFETs

Abstract

All Science Journal Classification (ASJC) codes

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