Subthreshold Kink Effect Revisited and Optimized for Si Nanowire MOSFETs

Chun Yu Chen, Jyi Tsong Lin, Meng Hsueh Chiang

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


A device design technique for boosting nanowire MOSFET performance beyond a 10-nm technology node is proposed using physical modeling and 3-D numerical simulation. The revisited subthreshold kink effect improves the transistor ON-OFF current ratio and is achievable with supply bias lower than 1 V. The proposed technique overcomes the fundamental and thermal voltage-limited subthreshold swing (SS). An optimized device design methodology to exploit the lowered SS is provided as well.

Original languageEnglish
Article number7383277
Pages (from-to)903-909
Number of pages7
JournalIEEE Transactions on Electron Devices
Issue number3
Publication statusPublished - 2016 Mar

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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