Abstract
A device design technique for boosting nanowire MOSFET performance beyond a 10-nm technology node is proposed using physical modeling and 3-D numerical simulation. The revisited subthreshold kink effect improves the transistor ON-OFF current ratio and is achievable with supply bias lower than 1 V. The proposed technique overcomes the fundamental and thermal voltage-limited subthreshold swing (SS). An optimized device design methodology to exploit the lowered SS is provided as well.
Original language | English |
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Article number | 7383277 |
Pages (from-to) | 903-909 |
Number of pages | 7 |
Journal | IEEE Transactions on Electron Devices |
Volume | 63 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2016 Mar |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering