TY - JOUR
T1 - Sulfide pretreatment effects of liquid phase deposited TiO2 on AlGaAs and its application
AU - Huang, Jung Sheng
AU - Lee, Tai Lung
AU - Zou, Yong Jie
AU - Lee, Kuan Wei
AU - Wang, Yeong Her
N1 - Funding Information:
The authors would like to thank the Dr. Tsu-Yi Wu of National Cheng-Kung University for his discussion and support. This work was also supported in part by the National Science Council of Taiwan under the contract nos., NSC 99-2221-E-214-067 , NSC 100-2221-E-214-013 , and 103CE03 .
Publisher Copyright:
© 2014 Elsevier Ltd. All rights reserved.
PY - 2015/8/1
Y1 - 2015/8/1
N2 - The study explored titanium dioxide (TiO2) prepared by liquid phase deposition (LPD) deposited on (NH4)2Sx-treated aluminum gallium arsenide (AlGaAs), including the surface roughness by using atomic force microscopy (AFM) measurements and electrical properties. The leakage current density of MOS capacitor is approximately 6.83 × 10-7 A/cm2 at zero electric field for the sample without any pretreatment. The interface trap density (Dit) and the flat-band voltage shift (ΔVFB) are 4.46 × 1012 cm-2 eV-1 and 3.6 V, respectively. After the 10 min 5% (NH4)2Sx pretreatment, the leakage current density, Dit, and ΔVFB can be improved to 1.04 × 10-7 A/cm2 at zero electric field, 2.28 × 1012 cm-2 eV-1, and 2 V, respectively. The paper also demonstrates the application to the AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) using LPD-TiO2 after 10 min sulfide pretreatment.
AB - The study explored titanium dioxide (TiO2) prepared by liquid phase deposition (LPD) deposited on (NH4)2Sx-treated aluminum gallium arsenide (AlGaAs), including the surface roughness by using atomic force microscopy (AFM) measurements and electrical properties. The leakage current density of MOS capacitor is approximately 6.83 × 10-7 A/cm2 at zero electric field for the sample without any pretreatment. The interface trap density (Dit) and the flat-band voltage shift (ΔVFB) are 4.46 × 1012 cm-2 eV-1 and 3.6 V, respectively. After the 10 min 5% (NH4)2Sx pretreatment, the leakage current density, Dit, and ΔVFB can be improved to 1.04 × 10-7 A/cm2 at zero electric field, 2.28 × 1012 cm-2 eV-1, and 2 V, respectively. The paper also demonstrates the application to the AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) using LPD-TiO2 after 10 min sulfide pretreatment.
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U2 - 10.1016/j.vacuum.2014.11.020
DO - 10.1016/j.vacuum.2014.11.020
M3 - Article
AN - SCOPUS:84930628431
SN - 0042-207X
VL - 118
SP - 100
EP - 103
JO - Vacuum
JF - Vacuum
ER -