Abstract
Very high performance InGaP/InGaAs/GaAs PHEMT will be demonstrated. The fabricated InGaP gated PHEMT device with 0.25×160 μm2 of gate dimension shows a 304 mA/mm of saturation drain current at VGS = 0V, VDS = 2 V and a 320 mS/mm of extrinsic transconductance. Noise figure at 12GHz is measured to be 0.46 dB with a 13 dB associated gain. With such a high gain and low noise, the drain-to-gate breakdown can be as high as 10 V. Standard deviation in the threshold voltage of 22 mV across a 4-inch wafer can be achieved using a highly selective wet recess etching process.
Original language | English |
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Pages | 237-240 |
Number of pages | 4 |
Publication status | Published - 2001 |
Event | 23rd Annual GaAs IC Symposium 2001 - Baltimore, MD, United States Duration: 2001 Oct 21 → 2001 Oct 24 |
Other
Other | 23rd Annual GaAs IC Symposium 2001 |
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Country/Territory | United States |
City | Baltimore, MD |
Period | 01-10-21 → 01-10-24 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering