Super low noise InGaP gated PHEMT

H. K. Huang; Y. H. Wang; C. L. Wu; J. C. Wang; C. S. Chang

Super low noise InGaP gated PHEMT

H. K. Huang, Y. H. Wang, C. L. Wu, J. C. Wang, C. S. Chang

Research output: Contribution to conference › Paper › peer-review

Abstract

Very high performance InGaP/InGaAs/GaAs PHEMT will be demonstrated. The fabricated InGaP gated PHEMT device with 0.25×160 μm² of gate dimension shows a 304 mA/mm of saturation drain current at V_GS = 0V, V_DS = 2 V and a 320 mS/mm of extrinsic transconductance. Noise figure at 12GHz is measured to be 0.46 dB with a 13 dB associated gain. With such a high gain and low noise, the drain-to-gate breakdown can be as high as 10 V. Standard deviation in the threshold voltage of 22 mV across a 4-inch wafer can be achieved using a highly selective wet recess etching process.

Original language	English
Pages	237-240
Number of pages	4
Publication status	Published - 2001
Event	23rd Annual GaAs IC Symposium 2001 - Baltimore, MD, United States Duration: 2001 Oct 21 → 2001 Oct 24

Other

Other	23rd Annual GaAs IC Symposium 2001
Country/Territory	United States
City	Baltimore, MD
Period	01-10-21 → 01-10-24

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Cite this

@conference{8a509714ec334bdab8ec0a61297df106,

title = "Super low noise InGaP gated PHEMT",

abstract = "Very high performance InGaP/InGaAs/GaAs PHEMT will be demonstrated. The fabricated InGaP gated PHEMT device with 0.25×160 μm2 of gate dimension shows a 304 mA/mm of saturation drain current at VGS = 0V, VDS = 2 V and a 320 mS/mm of extrinsic transconductance. Noise figure at 12GHz is measured to be 0.46 dB with a 13 dB associated gain. With such a high gain and low noise, the drain-to-gate breakdown can be as high as 10 V. Standard deviation in the threshold voltage of 22 mV across a 4-inch wafer can be achieved using a highly selective wet recess etching process.",

author = "Huang, {H. K.} and Wang, {Y. H.} and Wu, {C. L.} and Wang, {J. C.} and Chang, {C. S.}",

year = "2001",

language = "English",

pages = "237--240",

note = "23rd Annual GaAs IC Symposium 2001 ; Conference date: 21-10-2001 Through 24-10-2001",

}

TY - CONF

T1 - Super low noise InGaP gated PHEMT

AU - Huang, H. K.

AU - Wang, Y. H.

AU - Wu, C. L.

AU - Wang, J. C.

AU - Chang, C. S.

PY - 2001

Y1 - 2001

N2 - Very high performance InGaP/InGaAs/GaAs PHEMT will be demonstrated. The fabricated InGaP gated PHEMT device with 0.25×160 μm2 of gate dimension shows a 304 mA/mm of saturation drain current at VGS = 0V, VDS = 2 V and a 320 mS/mm of extrinsic transconductance. Noise figure at 12GHz is measured to be 0.46 dB with a 13 dB associated gain. With such a high gain and low noise, the drain-to-gate breakdown can be as high as 10 V. Standard deviation in the threshold voltage of 22 mV across a 4-inch wafer can be achieved using a highly selective wet recess etching process.

AB - Very high performance InGaP/InGaAs/GaAs PHEMT will be demonstrated. The fabricated InGaP gated PHEMT device with 0.25×160 μm2 of gate dimension shows a 304 mA/mm of saturation drain current at VGS = 0V, VDS = 2 V and a 320 mS/mm of extrinsic transconductance. Noise figure at 12GHz is measured to be 0.46 dB with a 13 dB associated gain. With such a high gain and low noise, the drain-to-gate breakdown can be as high as 10 V. Standard deviation in the threshold voltage of 22 mV across a 4-inch wafer can be achieved using a highly selective wet recess etching process.

UR - http://www.scopus.com/inward/record.url?scp=0035171097&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035171097&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0035171097

SP - 237

EP - 240

T2 - 23rd Annual GaAs IC Symposium 2001

Y2 - 21 October 2001 through 24 October 2001

ER -

Super low noise InGaP gated PHEMT

Abstract

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All Science Journal Classification (ASJC) codes

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