Super low noise InGaP gated PHEMT

H. K. Huang, Yeong-Her Wang, C. L. Wu, J. C. Wang, C. S. Chang

Research output: Contribution to conferencePaperpeer-review

1 Citation (Scopus)

Abstract

Very high performance InGaP/InGaAs/GaAs PHEMT will be demonstrated. The fabricated InGaP gated PHEMT device with 0.25×160 μm2 of gate dimension shows a 304 mA/mm of saturation drain current at VGS = 0V, VDS = 2 V and a 320 mS/mm of extrinsic transconductance. Noise figure at 12GHz is measured to be 0.46 dB with a 13 dB associated gain. With such a high gain and low noise, the drain-to-gate breakdown can be as high as 10 V. Standard deviation in the threshold voltage of 22 mV across a 4-inch wafer can be achieved using a highly selective wet recess etching process.

Original languageEnglish
Pages237-240
Number of pages4
Publication statusPublished - 2001 Jan 1
Event23rd Annual GaAs IC Symposium 2001 - Baltimore, MD, United States
Duration: 2001 Oct 212001 Oct 24

Other

Other23rd Annual GaAs IC Symposium 2001
CountryUnited States
CityBaltimore, MD
Period01-10-2101-10-24

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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