Suppressing the Initial Growth of Sidewall GaN by Modifying AlN-Coated Patterned Sapphire with KOH-Based Etchant

Wen Yang Hsu, Yen Ting Kuo, Shang Shih Hung, Pei Yu Wu, Jinn Kong Sheu, Kun Lin Lin, Yewchung Sermon Wu

Research output: Contribution to journalArticle

Abstract

Micron-sized patterned sapphire substrates (PSSs) with an ex situ sputtered AlN nucleation layer (NL) have been used to improve the performance of GaN-based light-emitting diodes (LEDs). The growth of GaN was enhanced not only from bottom c-plane, but also from the sidewall of the micron-sized patterns. In this study, KOH solution was used to etch AlN (especially sidewall AlN) for the first time. The additional etching process is very simple. It was found that KOH etching 1 min did enhance the light output power (LOP) of LED. However, with the increase of etching time to 4 min, the LOP decreased. Besides, the effect of remained AlN on GaN growth mechanism was investigated in detail.

Original languageEnglish
Article number016012
JournalECS Journal of Solid State Science and Technology
Volume9
Issue number1
DOIs
Publication statusPublished - 2020 Jan 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

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