Suppressing the Initial Growth of Sidewall GaN by Modifying AlN-Coated Patterned Sapphire with KOH-Based Etchant

Wen Yang Hsu; Yen Ting Kuo; Shang Shih Hung; Pei Yu Wu; Jinn Kong Sheu; Kun Lin Lin; Yewchung Sermon Wu

doi:10.1149/2.0182001JSS

Suppressing the Initial Growth of Sidewall GaN by Modifying AlN-Coated Patterned Sapphire with KOH-Based Etchant

Wen Yang Hsu, Yen Ting Kuo, Shang Shih Hung, Pei Yu Wu, Jinn Kong Sheu, Kun Lin Lin, Yewchung Sermon Wu

Department of Photonics

Research output: Contribution to journal › Article › peer-review

Abstract

Micron-sized patterned sapphire substrates (PSSs) with an ex situ sputtered AlN nucleation layer (NL) have been used to improve the performance of GaN-based light-emitting diodes (LEDs). The growth of GaN was enhanced not only from bottom c-plane, but also from the sidewall of the micron-sized patterns. In this study, KOH solution was used to etch AlN (especially sidewall AlN) for the first time. The additional etching process is very simple. It was found that KOH etching 1 min did enhance the light output power (LOP) of LED. However, with the increase of etching time to 4 min, the LOP decreased. Besides, the effect of remained AlN on GaN growth mechanism was investigated in detail.

Original language	English
Article number	016012
Journal	ECS Journal of Solid State Science and Technology
Volume	9
Issue number	1
DOIs	https://doi.org/10.1149/2.0182001JSS
Publication status	Published - 2020

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials

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10.1149/2.0182001JSS

Cite this

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title = "Suppressing the Initial Growth of Sidewall GaN by Modifying AlN-Coated Patterned Sapphire with KOH-Based Etchant",

abstract = "Micron-sized patterned sapphire substrates (PSSs) with an ex situ sputtered AlN nucleation layer (NL) have been used to improve the performance of GaN-based light-emitting diodes (LEDs). The growth of GaN was enhanced not only from bottom c-plane, but also from the sidewall of the micron-sized patterns. In this study, KOH solution was used to etch AlN (especially sidewall AlN) for the first time. The additional etching process is very simple. It was found that KOH etching 1 min did enhance the light output power (LOP) of LED. However, with the increase of etching time to 4 min, the LOP decreased. Besides, the effect of remained AlN on GaN growth mechanism was investigated in detail.",

author = "Hsu, {Wen Yang} and Kuo, {Yen Ting} and Hung, {Shang Shih} and Wu, {Pei Yu} and Sheu, {Jinn Kong} and Lin, {Kun Lin} and Wu, {Yewchung Sermon}",

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doi = "10.1149/2.0182001JSS",

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journal = "ECS Journal of Solid State Science and Technology",

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T1 - Suppressing the Initial Growth of Sidewall GaN by Modifying AlN-Coated Patterned Sapphire with KOH-Based Etchant

AU - Hsu, Wen Yang

AU - Kuo, Yen Ting

AU - Hung, Shang Shih

AU - Wu, Pei Yu

AU - Sheu, Jinn Kong

AU - Lin, Kun Lin

AU - Wu, Yewchung Sermon

PY - 2020

Y1 - 2020

N2 - Micron-sized patterned sapphire substrates (PSSs) with an ex situ sputtered AlN nucleation layer (NL) have been used to improve the performance of GaN-based light-emitting diodes (LEDs). The growth of GaN was enhanced not only from bottom c-plane, but also from the sidewall of the micron-sized patterns. In this study, KOH solution was used to etch AlN (especially sidewall AlN) for the first time. The additional etching process is very simple. It was found that KOH etching 1 min did enhance the light output power (LOP) of LED. However, with the increase of etching time to 4 min, the LOP decreased. Besides, the effect of remained AlN on GaN growth mechanism was investigated in detail.

AB - Micron-sized patterned sapphire substrates (PSSs) with an ex situ sputtered AlN nucleation layer (NL) have been used to improve the performance of GaN-based light-emitting diodes (LEDs). The growth of GaN was enhanced not only from bottom c-plane, but also from the sidewall of the micron-sized patterns. In this study, KOH solution was used to etch AlN (especially sidewall AlN) for the first time. The additional etching process is very simple. It was found that KOH etching 1 min did enhance the light output power (LOP) of LED. However, with the increase of etching time to 4 min, the LOP decreased. Besides, the effect of remained AlN on GaN growth mechanism was investigated in detail.

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Suppressing the Initial Growth of Sidewall GaN by Modifying AlN-Coated Patterned Sapphire with KOH-Based Etchant

Abstract

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