Suppressing the initial growth of sidewall GaN by modifying micron-sized patterned sapphire substrate with H3PO4-based etchant

Wen Yang Hsu, Yuan Chi Lian, Pei Yu Wu, Wei Min Yong, Jinn Kong Sheu, Kun Lin Lin, Yew Chung Sermon Wu

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Micron-sized patterned sapphire substrates (PSS) are used to improve the performance of GaN-based light-emitting diodes (LEDs). However, the growth of GaN is initiated not only from the bottom c-plane but also from the sidewall of the micron-sized patterns. Therefore, the coalescence of these GaN crystals creates irregular voids. In this study, two kinds of nucleation layers (NL)-ex-situ AlN NL and in-situ GaN NL-were used, and the growth of sidewall GaN was successfully suppressed in both systems by modifying the micron-sized PSS surface.

Original languageEnglish
Article number622
JournalMicromachines
Volume9
Issue number12
DOIs
Publication statusPublished - 2018 Nov 26

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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