TY - JOUR
T1 - Suppressing the lateral growth of gallium nitride nanowires by introducing hydrogen plasma
AU - Wu, Tung Hsien
AU - Hong, Franklin Chau Nan
N1 - Funding Information:
The authors gratefully acknowledge the financial support from the National Science Council of Taiwan under grant NSC-100-2221-E-006-147 and NSC-99-2221-E-006-197-MY3 , the Aim for the Top University Project from NCKU and the Central Taiwan Science Park under grant number: 302202501 .
PY - 2013/2/1
Y1 - 2013/2/1
N2 - In this study, we have found that the lateral homoepitaxial growth on GaN nanowires is suppressed by introducing hydrogen gas into the plasma-enhanced chemical vapor deposition (PECVD) apparatus for the growth of GaN nanowires. The formation of GaHx (x = 2, 3) species due to the reaction between gallium atoms and hydrogen plasma is shown to decrease the amount of excess gallium atoms adsorbed on GaN nanowire surfaces, which results in the elimination of nucleation on the nanowire surface and thus improves the surface smoothness of the nanowire. The stacked-cone nanostructures appear under low hydrogen or hydrogen-less conditions, but completely disappear under high hydrogen conditions in the PECVD system. The mechanism of the elimination of lateral growth on the nanowire surface is further proposed.
AB - In this study, we have found that the lateral homoepitaxial growth on GaN nanowires is suppressed by introducing hydrogen gas into the plasma-enhanced chemical vapor deposition (PECVD) apparatus for the growth of GaN nanowires. The formation of GaHx (x = 2, 3) species due to the reaction between gallium atoms and hydrogen plasma is shown to decrease the amount of excess gallium atoms adsorbed on GaN nanowire surfaces, which results in the elimination of nucleation on the nanowire surface and thus improves the surface smoothness of the nanowire. The stacked-cone nanostructures appear under low hydrogen or hydrogen-less conditions, but completely disappear under high hydrogen conditions in the PECVD system. The mechanism of the elimination of lateral growth on the nanowire surface is further proposed.
UR - http://www.scopus.com/inward/record.url?scp=84873739232&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84873739232&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2012.03.052
DO - 10.1016/j.tsf.2012.03.052
M3 - Article
AN - SCOPUS:84873739232
VL - 529
SP - 133
EP - 137
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
ER -