Suppression of both sidewall injection and hot-carrier effects using laterally graded emitter in bipolar transistors

Tzuen Hsi Huang, Ming Jer Chen, Ching Yuan Wu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

As scaling down the feature size of a bipolar transistor, the spacer between the emitter contact and the base contact becomes so much smaller that the diffused extrinsic base may encroach on the heavily-doped emitter. Two major serious problems concerned are the degradations due to the sidewall injection at forward bias and the hot carrier stress at reverse bias. A novel structure, so called Laterally Graded Emitter (LGE), has been recently proposed to solve these problems in BiCMOS applications. But it still has some limitations to apply such structure to the advanced bipolar transistors. The authors present a study on the utility of LGE structure for scaled bipolar transistors by two-dimensional numerical simulator PISCES-II B.

Original languageEnglish
Title of host publication1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers, VTSA 1991
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages205-209
Number of pages5
ISBN (Electronic)078030036X, 9780780300361
DOIs
Publication statusPublished - 1991 Jan 1
Event1991 International Symposium on VLSI Technology, Systems, and Applications, VTSA 1991 - Taipei, Taiwan
Duration: 1991 May 221991 May 24

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings
ISSN (Print)1930-8868

Conference

Conference1991 International Symposium on VLSI Technology, Systems, and Applications, VTSA 1991
CountryTaiwan
CityTaipei
Period91-05-2291-05-24

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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