Suppression of efficiency-droop effect of InGaN-based LEDs by using localized high indium quantum wells

Yung Chi Yao; Yi Ching Chen; Ya Ju Lee

doi:10.1117/12.917953

Suppression of efficiency-droop effect of InGaN-based LEDs by using localized high indium quantum wells

Yung Chi Yao, Yi Ching Chen, Ya Ju Lee

Program on Key Materials

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Staggered quantum wells (QWs) structures are numerically studied to reduce the influence of the efficiency-droop effect on the InGaN-based green light-emitting diode (LED). The location of high In-content InGaN layer in staggered QWs considerably affects the distribution of the electrostatic-field of an LED. When the high In-content InGaN layer is suitably located in the staggered QWs, the localized electrostatic-field with high intensity increases the transport efficiency of injected holes across the active region, improving the overall radiative efficiency of the LED. Most importantly, as accumulation of injected holes in the last QW is relieved, the Auger recombination process is quenched, suppressing the efficiency-droop in the LED. Theoretically, the incorporation of the staggered InGaN QWs in the green LED (λ = 530nm) can ensure an extremely low efficiency droop of 11.3%.

Original language	English
Title of host publication	Light-Emitting Diodes
Subtitle of host publication	Materials, Devices, and Applications for Solid State Lighting XVI
DOIs	https://doi.org/10.1117/12.917953
Publication status	Published - 2012
Event	Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI - San Francisco, CA, United States Duration: 2012 Jan 24 → 2012 Jan 26

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	8278
ISSN (Print)	0277-786X

Other

Other	Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI
Country/Territory	United States
City	San Francisco, CA
Period	12-01-24 → 12-01-26

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.917953

Cite this

Yao, Y. C., Chen, Y. C., & Lee, Y. J. (2012). Suppression of efficiency-droop effect of InGaN-based LEDs by using localized high indium quantum wells. In Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI Article 82781T (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8278). https://doi.org/10.1117/12.917953

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title = "Suppression of efficiency-droop effect of InGaN-based LEDs by using localized high indium quantum wells",

abstract = "Staggered quantum wells (QWs) structures are numerically studied to reduce the influence of the efficiency-droop effect on the InGaN-based green light-emitting diode (LED). The location of high In-content InGaN layer in staggered QWs considerably affects the distribution of the electrostatic-field of an LED. When the high In-content InGaN layer is suitably located in the staggered QWs, the localized electrostatic-field with high intensity increases the transport efficiency of injected holes across the active region, improving the overall radiative efficiency of the LED. Most importantly, as accumulation of injected holes in the last QW is relieved, the Auger recombination process is quenched, suppressing the efficiency-droop in the LED. Theoretically, the incorporation of the staggered InGaN QWs in the green LED (λ = 530nm) can ensure an extremely low efficiency droop of 11.3%.",

author = "Yao, {Yung Chi} and Chen, {Yi Ching} and Lee, {Ya Ju}",

year = "2012",

doi = "10.1117/12.917953",

language = "English",

isbn = "9780819489210",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Light-Emitting Diodes",

note = "Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI ; Conference date: 24-01-2012 Through 26-01-2012",

}

Yao, YC, Chen, YC & Lee, YJ 2012, Suppression of efficiency-droop effect of InGaN-based LEDs by using localized high indium quantum wells. in Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI., 82781T, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8278, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI, San Francisco, CA, United States, 12-01-24. https://doi.org/10.1117/12.917953

Suppression of efficiency-droop effect of InGaN-based LEDs by using localized high indium quantum wells. / Yao, Yung Chi; Chen, Yi Ching; Lee, Ya Ju.
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI. 2012. 82781T (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8278).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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N2 - Staggered quantum wells (QWs) structures are numerically studied to reduce the influence of the efficiency-droop effect on the InGaN-based green light-emitting diode (LED). The location of high In-content InGaN layer in staggered QWs considerably affects the distribution of the electrostatic-field of an LED. When the high In-content InGaN layer is suitably located in the staggered QWs, the localized electrostatic-field with high intensity increases the transport efficiency of injected holes across the active region, improving the overall radiative efficiency of the LED. Most importantly, as accumulation of injected holes in the last QW is relieved, the Auger recombination process is quenched, suppressing the efficiency-droop in the LED. Theoretically, the incorporation of the staggered InGaN QWs in the green LED (λ = 530nm) can ensure an extremely low efficiency droop of 11.3%.

AB - Staggered quantum wells (QWs) structures are numerically studied to reduce the influence of the efficiency-droop effect on the InGaN-based green light-emitting diode (LED). The location of high In-content InGaN layer in staggered QWs considerably affects the distribution of the electrostatic-field of an LED. When the high In-content InGaN layer is suitably located in the staggered QWs, the localized electrostatic-field with high intensity increases the transport efficiency of injected holes across the active region, improving the overall radiative efficiency of the LED. Most importantly, as accumulation of injected holes in the last QW is relieved, the Auger recombination process is quenched, suppressing the efficiency-droop in the LED. Theoretically, the incorporation of the staggered InGaN QWs in the green LED (λ = 530nm) can ensure an extremely low efficiency droop of 11.3%.

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Suppression of efficiency-droop effect of InGaN-based LEDs by using localized high indium quantum wells

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