Two different locations showing an abrupt increase of dc current gain at the opposite extreme of base-emitter voltages were found in InGaP/GaAs heterojunction bipolar transistors. Conversely, a relatively slight increase of current gain obtained in the range of base-emitter voltage forms a transition bridge between them. By inspecting the results of base current and current gain transients, an abrupt increase of current gain associated with a decrease of base current directly corresponds to the second abrupt increase of current gain.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)