Suppression of the burn-in effect in InGaP/GaAs heterojunction bipolar transistors by constant period of voltage stress

Kwok Keung Chong; Hsun Chin Chen; Mau Phon Houng; Yeong Her Wang; Shi Ting Lin

doi:10.1063/1.1640790

Suppression of the burn-in effect in InGaP/GaAs heterojunction bipolar transistors by constant period of voltage stress

Kwok Keung Chong, Hsun Chin Chen, Mau Phon Houng, Yeong Her Wang, Shi Ting Lin

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Two different locations showing an abrupt increase of dc current gain at the opposite extreme of base-emitter voltages were found in InGaP/GaAs heterojunction bipolar transistors. Conversely, a relatively slight increase of current gain obtained in the range of base-emitter voltage forms a transition bridge between them. By inspecting the results of base current and current gain transients, an abrupt increase of current gain associated with a decrease of base current directly corresponds to the second abrupt increase of current gain.

Original language	English
Pages (from-to)	2079-2083
Number of pages	5
Journal	Journal of Applied Physics
Volume	95
Issue number	4
DOIs	https://doi.org/10.1063/1.1640790
Publication status	Published - 2004 Feb 15

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.1640790

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abstract = "Two different locations showing an abrupt increase of dc current gain at the opposite extreme of base-emitter voltages were found in InGaP/GaAs heterojunction bipolar transistors. Conversely, a relatively slight increase of current gain obtained in the range of base-emitter voltage forms a transition bridge between them. By inspecting the results of base current and current gain transients, an abrupt increase of current gain associated with a decrease of base current directly corresponds to the second abrupt increase of current gain.",

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AU - Chong, Kwok Keung

AU - Chen, Hsun Chin

AU - Houng, Mau Phon

AU - Wang, Yeong Her

AU - Lin, Shi Ting

PY - 2004/2/15

Y1 - 2004/2/15

N2 - Two different locations showing an abrupt increase of dc current gain at the opposite extreme of base-emitter voltages were found in InGaP/GaAs heterojunction bipolar transistors. Conversely, a relatively slight increase of current gain obtained in the range of base-emitter voltage forms a transition bridge between them. By inspecting the results of base current and current gain transients, an abrupt increase of current gain associated with a decrease of base current directly corresponds to the second abrupt increase of current gain.

AB - Two different locations showing an abrupt increase of dc current gain at the opposite extreme of base-emitter voltages were found in InGaP/GaAs heterojunction bipolar transistors. Conversely, a relatively slight increase of current gain obtained in the range of base-emitter voltage forms a transition bridge between them. By inspecting the results of base current and current gain transients, an abrupt increase of current gain associated with a decrease of base current directly corresponds to the second abrupt increase of current gain.

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JF - Journal of Applied Physics

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Suppression of the burn-in effect in InGaP/GaAs heterojunction bipolar transistors by constant period of voltage stress

Abstract

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