Suppression of the burn-in effect in InGaP/GaAs heterojunction bipolar transistors by constant period of voltage stress

Kwok Keung Chong, Hsun Chin Chen, Mau-phon Houng, Yeong-Her Wang, Shi Ting Lin

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Two different locations showing an abrupt increase of dc current gain at the opposite extreme of base-emitter voltages were found in InGaP/GaAs heterojunction bipolar transistors. Conversely, a relatively slight increase of current gain obtained in the range of base-emitter voltage forms a transition bridge between them. By inspecting the results of base current and current gain transients, an abrupt increase of current gain associated with a decrease of base current directly corresponds to the second abrupt increase of current gain.

Original languageEnglish
Pages (from-to)2079-2083
Number of pages5
JournalJournal of Applied Physics
Volume95
Issue number4
DOIs
Publication statusPublished - 2004 Feb 15

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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