Surface and material characteristics of Ga2O3 thin films on GaAs

Ping Fong Huang; Yen Ting Chen; H. Y. Lee; Zhe Chuan Feng; Hao Hsiung Lin; Weijie Lu

doi:10.1117/12.795535

Surface and material characteristics of Ga₂O₃ thin films on GaAs

Ping Fong Huang, Yen Ting Chen, H. Y. Lee, Zhe Chuan Feng, Hao Hsiung Lin, Weijie Lu

Department of Photonics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

Surface and material properties of dielectric Ga₂O₃ thin films deposited onto GaAs substrate with different annealing temperature were studied via a variety of techniques, including X-ray diffraction (XRD), X-ray Photoelectron Spectroscopy (XPS), scanning electron microscope (SEM) and energy dispersive X-ray spectroscopy (EDX). The effects of annealing are investigated. The increase of ratio of oxygen to gallium assuredly as the annealing temperature increased was found. The relationship between the interface quality and annealing temperature is identified.

Original language	English
Title of host publication	Advances in Thin-Film Coatings for Optical Applications V
DOIs	https://doi.org/10.1117/12.795535
Publication status	Published - 2008
Event	Advances in Thin-Film Coatings for Optical Applications V - San Diego, CA, United States Duration: 2008 Aug 11 → 2008 Aug 11

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	7067
ISSN (Print)	0277-786X

Conference

Conference	Advances in Thin-Film Coatings for Optical Applications V
Country/Territory	United States
City	San Diego, CA
Period	08-08-11 → 08-08-11

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.795535

Cite this

@inproceedings{7b84d9cdc118400da7d8ec2fa6fb90b6,

title = "Surface and material characteristics of Ga2O3 thin films on GaAs",

abstract = "Surface and material properties of dielectric Ga2O3 thin films deposited onto GaAs substrate with different annealing temperature were studied via a variety of techniques, including X-ray diffraction (XRD), X-ray Photoelectron Spectroscopy (XPS), scanning electron microscope (SEM) and energy dispersive X-ray spectroscopy (EDX). The effects of annealing are investigated. The increase of ratio of oxygen to gallium assuredly as the annealing temperature increased was found. The relationship between the interface quality and annealing temperature is identified.",

author = "Huang, {Ping Fong} and Chen, {Yen Ting} and Lee, {H. Y.} and Feng, {Zhe Chuan} and Lin, {Hao Hsiung} and Weijie Lu",

year = "2008",

doi = "10.1117/12.795535",

language = "English",

isbn = "9780819472878",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Advances in Thin-Film Coatings for Optical Applications V",

note = "Advances in Thin-Film Coatings for Optical Applications V ; Conference date: 11-08-2008 Through 11-08-2008",

}

Huang, PF, Chen, YT, Lee, HY, Feng, ZC, Lin, HH & Lu, W 2008, Surface and material characteristics of Ga₂O₃ thin films on GaAs. in Advances in Thin-Film Coatings for Optical Applications V., 70670M, Proceedings of SPIE - The International Society for Optical Engineering, vol. 7067, Advances in Thin-Film Coatings for Optical Applications V, San Diego, CA, United States, 08-08-11. https://doi.org/10.1117/12.795535

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T1 - Surface and material characteristics of Ga2O3 thin films on GaAs

AU - Huang, Ping Fong

AU - Chen, Yen Ting

AU - Lee, H. Y.

AU - Feng, Zhe Chuan

AU - Lin, Hao Hsiung

AU - Lu, Weijie

PY - 2008

Y1 - 2008

N2 - Surface and material properties of dielectric Ga2O3 thin films deposited onto GaAs substrate with different annealing temperature were studied via a variety of techniques, including X-ray diffraction (XRD), X-ray Photoelectron Spectroscopy (XPS), scanning electron microscope (SEM) and energy dispersive X-ray spectroscopy (EDX). The effects of annealing are investigated. The increase of ratio of oxygen to gallium assuredly as the annealing temperature increased was found. The relationship between the interface quality and annealing temperature is identified.

AB - Surface and material properties of dielectric Ga2O3 thin films deposited onto GaAs substrate with different annealing temperature were studied via a variety of techniques, including X-ray diffraction (XRD), X-ray Photoelectron Spectroscopy (XPS), scanning electron microscope (SEM) and energy dispersive X-ray spectroscopy (EDX). The effects of annealing are investigated. The increase of ratio of oxygen to gallium assuredly as the annealing temperature increased was found. The relationship between the interface quality and annealing temperature is identified.

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BT - Advances in Thin-Film Coatings for Optical Applications V

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