Surface channel current in InAsGaSb type-II superlattice photodiodes

Shin Mou, Jian V. Li, Shun Lien Chuang

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19 Citations (Scopus)

Abstract

We observed experimental evidences of surface channel current on the sidewall of InAsGaSb superlattice photodiodes. We investigated the surface channel current by measuring the current-voltage (I-V) characteristics of the diodes. The experimental data compare very well with our theoretical model before and after ammonium sulfide passivation. By using the passivation, we reduced the surface channel current by five times, which supports that the surface channel current is induced by surface carriers. We believe that the surface channel current results from the inversion layer of a p -type superlattice with surface Fermi levels pinned above the conduction-band minimum in InAsGaSb superlattices.

Original languageEnglish
Article number066103
JournalJournal of Applied Physics
Volume102
Issue number6
DOIs
Publication statusPublished - 2007 Oct 8

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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