Surface characterization of homoepitaxial β-FeSi2 film on β-FeSi2 (111) substrate by X-ray photoelectron and absorption spectroscopy

F. Esaka; H. Yamamoto; H. Udono; N. Matsubayashi; K. Yamaguchi; S. Shamoto; M. Magara; T. Kimura

doi:10.1016/j.phpro.2011.01.043

Surface characterization of homoepitaxial β-FeSi₂ film on β-FeSi₂ (111) substrate by X-ray photoelectron and absorption spectroscopy

F. Esaka
, H. Yamamoto
, H. Udono
, N. Matsubayashi
, K. Yamaguchi
, S. Shamoto
, M. Magara
, T. Kimura

Department of Physics

Research output: Contribution to journal › Article › peer-review

Abstract

Surface characterization of a homoepitaxial β-FeSi₂ film grown on a β-FeSi₂ single crystal synthesized with a temperaturegradient solution method was performed by X-ray photoelectron spectroscopy (XPS) and X-ray absorption spectroscopy (XAS). The annealing to remove native oxide layers on the crystal before homoepitaxial growth induced the formation of Fe-rich silicide in the surface. The XAS spectra confirm that the homoepitaxial β-FeSi₂ film can be grown on the crystal, while Fe-rich silicide is partially formed. The control of the surface chemical state is important to obtain homoepitaxial films with excellent quality.

Original language	English
Pages (from-to)	150-153
Number of pages	4
Journal	Physics Procedia
Volume	11
DOIs	https://doi.org/10.1016/j.phpro.2011.01.043
Publication status	Published - 2011

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1016/j.phpro.2011.01.043

Cite this

@article{053f3752a5d54061bbdae32eed288018,

title = "Surface characterization of homoepitaxial β-FeSi2 film on β-FeSi2 (111) substrate by X-ray photoelectron and absorption spectroscopy",

abstract = "Surface characterization of a homoepitaxial β-FeSi2 film grown on a β-FeSi2 single crystal synthesized with a temperaturegradient solution method was performed by X-ray photoelectron spectroscopy (XPS) and X-ray absorption spectroscopy (XAS). The annealing to remove native oxide layers on the crystal before homoepitaxial growth induced the formation of Fe-rich silicide in the surface. The XAS spectra confirm that the homoepitaxial β-FeSi2 film can be grown on the crystal, while Fe-rich silicide is partially formed. The control of the surface chemical state is important to obtain homoepitaxial films with excellent quality.",

author = "F. Esaka and H. Yamamoto and H. Udono and N. Matsubayashi and K. Yamaguchi and S. Shamoto and M. Magara and T. Kimura",

note = "Funding Information: This work has been performed with the approval of the Photon Factory Program Advisory Committee (PF-PAC No. 2008G575). This work was partially supported by the Grant-in-Aid for Scientific Research (C) (No. 21560765), Japan Society for the Promotion of Science (JSPS).",

year = "2011",

doi = "10.1016/j.phpro.2011.01.043",

language = "English",

volume = "11",

pages = "150--153",

journal = "Physics Procedia",

issn = "1875-3884",

publisher = "Elsevier BV",

}

TY - JOUR

T1 - Surface characterization of homoepitaxial β-FeSi2 film on β-FeSi2 (111) substrate by X-ray photoelectron and absorption spectroscopy

AU - Esaka, F.

AU - Yamamoto, H.

AU - Udono, H.

AU - Matsubayashi, N.

AU - Yamaguchi, K.

AU - Shamoto, S.

AU - Magara, M.

AU - Kimura, T.

N1 - Funding Information: This work has been performed with the approval of the Photon Factory Program Advisory Committee (PF-PAC No. 2008G575). This work was partially supported by the Grant-in-Aid for Scientific Research (C) (No. 21560765), Japan Society for the Promotion of Science (JSPS).

PY - 2011

Y1 - 2011

N2 - Surface characterization of a homoepitaxial β-FeSi2 film grown on a β-FeSi2 single crystal synthesized with a temperaturegradient solution method was performed by X-ray photoelectron spectroscopy (XPS) and X-ray absorption spectroscopy (XAS). The annealing to remove native oxide layers on the crystal before homoepitaxial growth induced the formation of Fe-rich silicide in the surface. The XAS spectra confirm that the homoepitaxial β-FeSi2 film can be grown on the crystal, while Fe-rich silicide is partially formed. The control of the surface chemical state is important to obtain homoepitaxial films with excellent quality.

AB - Surface characterization of a homoepitaxial β-FeSi2 film grown on a β-FeSi2 single crystal synthesized with a temperaturegradient solution method was performed by X-ray photoelectron spectroscopy (XPS) and X-ray absorption spectroscopy (XAS). The annealing to remove native oxide layers on the crystal before homoepitaxial growth induced the formation of Fe-rich silicide in the surface. The XAS spectra confirm that the homoepitaxial β-FeSi2 film can be grown on the crystal, while Fe-rich silicide is partially formed. The control of the surface chemical state is important to obtain homoepitaxial films with excellent quality.

UR - https://www.scopus.com/pages/publications/79959394489

UR - https://www.scopus.com/pages/publications/79959394489#tab=citedBy

U2 - 10.1016/j.phpro.2011.01.043

DO - 10.1016/j.phpro.2011.01.043

M3 - Article

AN - SCOPUS:79959394489

SN - 1875-3884

VL - 11

SP - 150

EP - 153

JO - Physics Procedia

JF - Physics Procedia

ER -

Surface characterization of homoepitaxial β-FeSi₂ film on β-FeSi₂ (111) substrate by X-ray photoelectron and absorption spectroscopy

Abstract

All Science Journal Classification (ASJC) codes

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