Surface-dominated conduction in a 6 nm thick Bi 2Se 3 thin film

Liang He, Faxian Xiu, Xinxin Yu, Marcus Teague, Wanjun Jiang, Yabin Fan, Xufeng Kou, Murong Lang, Yong Wang, Guan Huang, Nai Chang Yeh, Kang L. Wang

Research output: Contribution to journalArticlepeer-review

161 Citations (Scopus)


We report a direct observation of surface dominated conduction in an intrinsic Bi 2Se 3 thin film with a thickness of six quintuple layers grown on lattice-matched CdS (0001) substrates by molecular beam epitaxy. Shubnikov-de Haas oscillations from the topological surface states suggest that the Fermi level falls inside the bulk band gap and is 53 ± 5 meV above the Dirac point, which is in agreement with 70 ± 20 meV obtained from scanning tunneling spectroscopies. Our results demonstrate a great potential of producing genuine topological insulator devices using Dirac Fermions of the surface states, when the film thickness is pushed to nanometer range.

Original languageEnglish
Pages (from-to)1486-1490
Number of pages5
JournalNano letters
Issue number3
Publication statusPublished - 2012 Mar 14

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics
  • Mechanical Engineering


Dive into the research topics of 'Surface-dominated conduction in a 6 nm thick Bi 2Se 3 thin film'. Together they form a unique fingerprint.

Cite this