Surface immobilized heteroleptic copper compounds as state variables that show negative differential resistance

Sanaz Kabehie; Adam Z. Stieg; Mei Xue; Monty Liong; Kang L. Wang; Jeffrey I. Zink

doi:10.1021/jz900324f

Surface immobilized heteroleptic copper compounds as state variables that show negative differential resistance

Sanaz Kabehie, Adam Z. Stieg, Mei Xue, Monty Liong, Kang L. Wang, Jeffrey I. Zink

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

Surface immobilized bidentate heteroleptic Cu(I) compounds are synthesized using a surface outward sequential synthesis and are characterized using solid-state NMR and atomic force microscopy (AFM). Through use of chemical redox agents, the reversible switching characteristics of SiO₂-immobilized Cu(I) compounds (tetrahedral) to Cu(II) (square planar) are verified via UV-visible absorption spectroscopy and electron paramagnetic resonance. Electrical properties of this system are characterized via preparation of a sandwichtype device using p⁺ silicon and conductive AFM (cAFM). Current-Voltage (I-V) spectroscopy demonstrates that this system reproducibly switches between Cu(I) and Cu(II) states at approximately -0.8 and 2.3 V.

Original language	English
Pages (from-to)	589-593
Number of pages	5
Journal	Journal of Physical Chemistry Letters
Volume	1
Issue number	3
DOIs	https://doi.org/10.1021/jz900324f
Publication status	Published - 2010 Feb 4

All Science Journal Classification (ASJC) codes

General Materials Science
Physical and Theoretical Chemistry

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10.1021/jz900324f

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title = "Surface immobilized heteroleptic copper compounds as state variables that show negative differential resistance",

abstract = "Surface immobilized bidentate heteroleptic Cu(I) compounds are synthesized using a surface outward sequential synthesis and are characterized using solid-state NMR and atomic force microscopy (AFM). Through use of chemical redox agents, the reversible switching characteristics of SiO2-immobilized Cu(I) compounds (tetrahedral) to Cu(II) (square planar) are verified via UV-visible absorption spectroscopy and electron paramagnetic resonance. Electrical properties of this system are characterized via preparation of a sandwichtype device using p+ silicon and conductive AFM (cAFM). Current-Voltage (I-V) spectroscopy demonstrates that this system reproducibly switches between Cu(I) and Cu(II) states at approximately -0.8 and 2.3 V.",

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TY - JOUR

T1 - Surface immobilized heteroleptic copper compounds as state variables that show negative differential resistance

AU - Kabehie, Sanaz

AU - Stieg, Adam Z.

AU - Xue, Mei

AU - Liong, Monty

AU - Wang, Kang L.

AU - Zink, Jeffrey I.

PY - 2010/2/4

Y1 - 2010/2/4

N2 - Surface immobilized bidentate heteroleptic Cu(I) compounds are synthesized using a surface outward sequential synthesis and are characterized using solid-state NMR and atomic force microscopy (AFM). Through use of chemical redox agents, the reversible switching characteristics of SiO2-immobilized Cu(I) compounds (tetrahedral) to Cu(II) (square planar) are verified via UV-visible absorption spectroscopy and electron paramagnetic resonance. Electrical properties of this system are characterized via preparation of a sandwichtype device using p+ silicon and conductive AFM (cAFM). Current-Voltage (I-V) spectroscopy demonstrates that this system reproducibly switches between Cu(I) and Cu(II) states at approximately -0.8 and 2.3 V.

AB - Surface immobilized bidentate heteroleptic Cu(I) compounds are synthesized using a surface outward sequential synthesis and are characterized using solid-state NMR and atomic force microscopy (AFM). Through use of chemical redox agents, the reversible switching characteristics of SiO2-immobilized Cu(I) compounds (tetrahedral) to Cu(II) (square planar) are verified via UV-visible absorption spectroscopy and electron paramagnetic resonance. Electrical properties of this system are characterized via preparation of a sandwichtype device using p+ silicon and conductive AFM (cAFM). Current-Voltage (I-V) spectroscopy demonstrates that this system reproducibly switches between Cu(I) and Cu(II) states at approximately -0.8 and 2.3 V.

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Surface immobilized heteroleptic copper compounds as state variables that show negative differential resistance

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