SURFACE MORPHOLOGIES OF GaAs LAYERS GROWN BY ARSENIC-PRESSURE-CONTROLLED MOLECULAR BEAM EPITAXY.

Y. H. Wang, W. C. Liu, C. Y. Chang, S. A. Liao

Research output: Contribution to journalArticlepeer-review

35 Citations (Scopus)

Fingerprint Dive into the research topics of 'SURFACE MORPHOLOGIES OF GaAs LAYERS GROWN BY ARSENIC-PRESSURE-CONTROLLED MOLECULAR BEAM EPITAXY.'. Together they form a unique fingerprint.

Engineering & Materials Science

Physics & Astronomy