Surface Morphology-Dependent Sensitivity of Thin-Film-Structured Indium Oxide-Based NO 2 Gas Sensors

Research output: Contribution to journalArticle

Abstract

This study investigated the sensitivity dependence of thin-film-structured NO 2 gas sensors on the surface morphology of indium oxide-sensing membranes. The indium oxide-sensing membranes were deposited on quartz substrates by using a radio frequency magnetron sputtering system at various oxygen/(argon + oxygen) ratios to modify their In and O atomic percentage, surface morphology, and grain size in the membranes. According to the energy dispersive spectroscopy and x-ray diffraction results, the oxygen atomic percentage and the grain size of the indium oxide-sensing membranes increased and decreased with an increase in the oxygen/(argon + oxygen) ratio, respectively. Through atomic force microscopy, the average roughness of 50-nm-thick indium oxide films deposited at various ratios of oxygen/(argon + oxygen), namely 0% oxygen (pure argon), 20% oxygen, 60% oxygen, and 100% oxygen (pure oxygen), was found to be 0.80 nm, 0.98 nm, 2.68 nm, and 1.25 nm, respectively. The highest sensitivity of the various NO 2 gas sensors was observed at an operating temperature of 150°C because of the generated O - ions and the provision of sufficient energy to overcome the required activation energy. At the operating temperature of 150°C, the sensitivity tendency of the various NO 2 gas sensors was according to the surface roughness of the indium oxide-sensing membranes. Furthermore, the response and the recovery times of the various NO 2 gas sensors corresponded to the surface morphology of the indium oxide-sensing membranes. The response and the recovery times of the NO 2 gas sensors operated at 150°C under an NO 2 gas concentration of 100 ppm were 70 s and 364 s, respectively.

Original languageEnglish
Pages (from-to)2391-2397
Number of pages7
JournalJournal of Electronic Materials
Volume48
Issue number4
DOIs
Publication statusPublished - 2019 Apr 15

Fingerprint

Chemical sensors
indium oxides
Indium
Surface morphology
Oxygen
Thin films
Oxides
sensitivity
sensors
oxygen
thin films
Argon
gases
membranes
Membranes
argon
operating temperature
grain size
Surface roughness
recovery

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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title = "Surface Morphology-Dependent Sensitivity of Thin-Film-Structured Indium Oxide-Based NO 2 Gas Sensors",
abstract = "This study investigated the sensitivity dependence of thin-film-structured NO 2 gas sensors on the surface morphology of indium oxide-sensing membranes. The indium oxide-sensing membranes were deposited on quartz substrates by using a radio frequency magnetron sputtering system at various oxygen/(argon + oxygen) ratios to modify their In and O atomic percentage, surface morphology, and grain size in the membranes. According to the energy dispersive spectroscopy and x-ray diffraction results, the oxygen atomic percentage and the grain size of the indium oxide-sensing membranes increased and decreased with an increase in the oxygen/(argon + oxygen) ratio, respectively. Through atomic force microscopy, the average roughness of 50-nm-thick indium oxide films deposited at various ratios of oxygen/(argon + oxygen), namely 0{\%} oxygen (pure argon), 20{\%} oxygen, 60{\%} oxygen, and 100{\%} oxygen (pure oxygen), was found to be 0.80 nm, 0.98 nm, 2.68 nm, and 1.25 nm, respectively. The highest sensitivity of the various NO 2 gas sensors was observed at an operating temperature of 150°C because of the generated O - ions and the provision of sufficient energy to overcome the required activation energy. At the operating temperature of 150°C, the sensitivity tendency of the various NO 2 gas sensors was according to the surface roughness of the indium oxide-sensing membranes. Furthermore, the response and the recovery times of the various NO 2 gas sensors corresponded to the surface morphology of the indium oxide-sensing membranes. The response and the recovery times of the NO 2 gas sensors operated at 150°C under an NO 2 gas concentration of 100 ppm were 70 s and 364 s, respectively.",
author = "Jian, {Li Yi} and Lee, {Hsin Ying} and Lee, {Ching Ting}",
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Surface Morphology-Dependent Sensitivity of Thin-Film-Structured Indium Oxide-Based NO 2 Gas Sensors . / Jian, Li Yi; Lee, Hsin Ying; Lee, Ching Ting.

In: Journal of Electronic Materials, Vol. 48, No. 4, 15.04.2019, p. 2391-2397.

Research output: Contribution to journalArticle

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T1 - Surface Morphology-Dependent Sensitivity of Thin-Film-Structured Indium Oxide-Based NO 2 Gas Sensors

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AU - Lee, Ching Ting

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AB - This study investigated the sensitivity dependence of thin-film-structured NO 2 gas sensors on the surface morphology of indium oxide-sensing membranes. The indium oxide-sensing membranes were deposited on quartz substrates by using a radio frequency magnetron sputtering system at various oxygen/(argon + oxygen) ratios to modify their In and O atomic percentage, surface morphology, and grain size in the membranes. According to the energy dispersive spectroscopy and x-ray diffraction results, the oxygen atomic percentage and the grain size of the indium oxide-sensing membranes increased and decreased with an increase in the oxygen/(argon + oxygen) ratio, respectively. Through atomic force microscopy, the average roughness of 50-nm-thick indium oxide films deposited at various ratios of oxygen/(argon + oxygen), namely 0% oxygen (pure argon), 20% oxygen, 60% oxygen, and 100% oxygen (pure oxygen), was found to be 0.80 nm, 0.98 nm, 2.68 nm, and 1.25 nm, respectively. The highest sensitivity of the various NO 2 gas sensors was observed at an operating temperature of 150°C because of the generated O - ions and the provision of sufficient energy to overcome the required activation energy. At the operating temperature of 150°C, the sensitivity tendency of the various NO 2 gas sensors was according to the surface roughness of the indium oxide-sensing membranes. Furthermore, the response and the recovery times of the various NO 2 gas sensors corresponded to the surface morphology of the indium oxide-sensing membranes. The response and the recovery times of the NO 2 gas sensors operated at 150°C under an NO 2 gas concentration of 100 ppm were 70 s and 364 s, respectively.

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