The initial stage of GaAs oxidation by a near-room-temperature liquid phase chemical-enhanced technique has been studied. Based on the experimental results of X-ray photoelectron spectroscopy, a complete model illustrating the chemical composition of the grown oxide film has been established. To clarify the kinetics of oxide growth in a liquid solution in more detail, we have also performed selective oxidation and surface profile measurements. Unusual features of the oxide growth kinetics have been observed by investigating the physical structure of oxide at the edge of mask in the selective oxidation.
|Number of pages||4|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||7 B|
|Publication status||Published - 2000 Jan 1|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)