Surface passivated function of GaAs MSM-PDs using photoelectrochemical oxidation method

Ching Ting Lee; Hsin Ying Lee

doi:10.1109/LPT.2004.839447

Surface passivated function of GaAs MSM-PDs using photoelectrochemical oxidation method

Ching Ting Lee, Hsin Ying Lee

Department of Photonics

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

To improve the performance of GaAs metal-semiconductor-metal photodetectors (MSM-PDs), we directly grew an oxide passivation layer in regions between the interdigitated electrodes of MSM-PDs. using the photoelectrochemical oxidation method. The measured dark current of passivated MSM-PDs was comparatively lower than that of unpassivated devices for all of the applied voltages. The breakdown voltages of MSM-PDs with and without oxide passivation layer were 52.5 and 42.5 V, respectively. The benefits of incorporating the oxide passivation layer will possibly lead to a sizable reduction of surface states that in return will help to decrease the probability of surface breakdown. Also, it should improve the rejection ratio of MSM-PDs.

Original language	English
Pages (from-to)	462-464
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	17
Issue number	2
DOIs	https://doi.org/10.1109/LPT.2004.839447
Publication status	Published - 2005 Feb

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2004.839447

Cite this

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title = "Surface passivated function of GaAs MSM-PDs using photoelectrochemical oxidation method",

abstract = "To improve the performance of GaAs metal-semiconductor-metal photodetectors (MSM-PDs), we directly grew an oxide passivation layer in regions between the interdigitated electrodes of MSM-PDs. using the photoelectrochemical oxidation method. The measured dark current of passivated MSM-PDs was comparatively lower than that of unpassivated devices for all of the applied voltages. The breakdown voltages of MSM-PDs with and without oxide passivation layer were 52.5 and 42.5 V, respectively. The benefits of incorporating the oxide passivation layer will possibly lead to a sizable reduction of surface states that in return will help to decrease the probability of surface breakdown. Also, it should improve the rejection ratio of MSM-PDs.",

author = "Lee, {Ching Ting} and Lee, {Hsin Ying}",

note = "Funding Information: Manuscript received July 1, 2004; revised September 2, 2004. This work was supported by the National Science Council of the Republic of China under Grant NSC 92-2215-E008-008.",

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AU - Lee, Hsin Ying

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N2 - To improve the performance of GaAs metal-semiconductor-metal photodetectors (MSM-PDs), we directly grew an oxide passivation layer in regions between the interdigitated electrodes of MSM-PDs. using the photoelectrochemical oxidation method. The measured dark current of passivated MSM-PDs was comparatively lower than that of unpassivated devices for all of the applied voltages. The breakdown voltages of MSM-PDs with and without oxide passivation layer were 52.5 and 42.5 V, respectively. The benefits of incorporating the oxide passivation layer will possibly lead to a sizable reduction of surface states that in return will help to decrease the probability of surface breakdown. Also, it should improve the rejection ratio of MSM-PDs.

AB - To improve the performance of GaAs metal-semiconductor-metal photodetectors (MSM-PDs), we directly grew an oxide passivation layer in regions between the interdigitated electrodes of MSM-PDs. using the photoelectrochemical oxidation method. The measured dark current of passivated MSM-PDs was comparatively lower than that of unpassivated devices for all of the applied voltages. The breakdown voltages of MSM-PDs with and without oxide passivation layer were 52.5 and 42.5 V, respectively. The benefits of incorporating the oxide passivation layer will possibly lead to a sizable reduction of surface states that in return will help to decrease the probability of surface breakdown. Also, it should improve the rejection ratio of MSM-PDs.

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Surface passivated function of GaAs MSM-PDs using photoelectrochemical oxidation method

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