TY - JOUR
T1 - Surface passivated function of GaAs MSM-PDs using photoelectrochemical oxidation method
AU - Lee, Ching Ting
AU - Lee, Hsin Ying
N1 - Funding Information:
Manuscript received July 1, 2004; revised September 2, 2004. This work was supported by the National Science Council of the Republic of China under Grant NSC 92-2215-E008-008.
PY - 2005/2
Y1 - 2005/2
N2 - To improve the performance of GaAs metal-semiconductor-metal photodetectors (MSM-PDs), we directly grew an oxide passivation layer in regions between the interdigitated electrodes of MSM-PDs. using the photoelectrochemical oxidation method. The measured dark current of passivated MSM-PDs was comparatively lower than that of unpassivated devices for all of the applied voltages. The breakdown voltages of MSM-PDs with and without oxide passivation layer were 52.5 and 42.5 V, respectively. The benefits of incorporating the oxide passivation layer will possibly lead to a sizable reduction of surface states that in return will help to decrease the probability of surface breakdown. Also, it should improve the rejection ratio of MSM-PDs.
AB - To improve the performance of GaAs metal-semiconductor-metal photodetectors (MSM-PDs), we directly grew an oxide passivation layer in regions between the interdigitated electrodes of MSM-PDs. using the photoelectrochemical oxidation method. The measured dark current of passivated MSM-PDs was comparatively lower than that of unpassivated devices for all of the applied voltages. The breakdown voltages of MSM-PDs with and without oxide passivation layer were 52.5 and 42.5 V, respectively. The benefits of incorporating the oxide passivation layer will possibly lead to a sizable reduction of surface states that in return will help to decrease the probability of surface breakdown. Also, it should improve the rejection ratio of MSM-PDs.
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U2 - 10.1109/LPT.2004.839447
DO - 10.1109/LPT.2004.839447
M3 - Article
AN - SCOPUS:13444311922
SN - 1041-1135
VL - 17
SP - 462
EP - 464
JO - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
IS - 2
ER -