Abstract
A surface plasmon enhanced light-emitting diode includes, from bottom to top, a substrate, an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, and a plurality of metal filler elements. The p-type semiconductor layer includes upper and lower surfaces, and the upper surface is recessed downward to form a plurality of spaced apart recesses for receiving the metal filler elements, respectively.
| Translated title of the contribution | 可受表面電漿子強化之發光二極體 |
|---|---|
| Original language | English |
| Patent number | 8338819 |
| Publication status | Published - 2011 Sept 29 |