Surface preparation and characterization of single crystalline β-FeSi2

Yoichi Yamada, Ippei Wakaya, Shinji Ohuchi, Hiroyuki Yamamoto, Hidehito Asaoka, Shin ichi Shamoto, Haruhiko Udono

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


Well-defined clean surfaces of single crystalline β-FeSi2 have for the first time been prepared and characterized at the atomic scale. Surface oxide was removed by heating the crystal at 850 °C in ultra-high vacuum (UHV), resulted in an atomically flat, clean surface. Scanning tunneling microscope (STM) and low-energy electron diffraction (LEED) measurements reveal the absence of long-range surface reconstruction in the low-index (1 0 0), (1 0 1) and (1 1 0) surfaces, which is unique among compound semiconductors. However, a significant number of surface defects could still be found within the clean surface. Characterizing and controlling of those surface defects will be necessary in order to use this material in applications.

Original languageEnglish
Pages (from-to)3006-3009
Number of pages4
JournalSurface Science
Issue number18
Publication statusPublished - 2008 Sep 15

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Surface preparation and characterization of single crystalline β-FeSi<sub>2</sub>'. Together they form a unique fingerprint.

Cite this