Surface properties of the AlGaN/GaN superlattice grown at different temperatures by metalorganic chemical vapor deposition

Wei Chih Lai, Cheng Huang Kuo, Wei Yu Yen, Jinng Kong Sheu, Shoou Jinng Chang

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1 Citation (Scopus)

Abstract

AlGaN/GaN strained layer superlattice (SLS) structures were prepared by metalorganic vapor deposition (MOCVD) under various growth conditions. It was found that the surface morphology and V-shaped pits were determined by growth temperature. Two different types of pit were observed namely, minute pits and open V-shape pits, in scanning electronic microscopy (SEM) and atomic force microscopy (AFM) images. The density of minute pits of AlGaN/GaN SLS decreased with increasing growth temperature. It was also found that the groovelike and striplike shapes of the surface morphology of the samples prepared at 800°C revealed a preferred orientation at about 30° angle to the flat side of the substrate, but this preferred orientation was disrupted at a higher growth temperature. The samples prepared at 850 and 900°C exhibited a higher PL intensity with a peak wavelength of about 363 nm because of the improvement in the crystal quality of AlGaN/GaN SLS.

Original languageEnglish
Pages (from-to)8730-8732
Number of pages3
JournalJapanese journal of applied physics
Volume47
Issue number12
DOIs
Publication statusPublished - 2008 Dec 19

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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