Surface roughness of gallium nitride with volcano-like protrusions formed by KrF excimer laser etching

Wei Chi Lee, Kai Ming Uang, Tron Min Chen, Der Ming Kuo, Pei Ren Wang, Po Hong Wang, Shui-Jinn Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Use of deep ultraviolet (248 nm) KrF laser irradiation to roughen vertical GaN-based LEDs surface with volcanolike protrusions for light output (Lop) improvement was proposed and demonstrated. After pulse irradiations of KrF laser (750-850 mJ/cm2), the rate of electron-hole pair recombination at sites with dislocation defects is greater than for crystalline GaN, favoring for the formation of GaOx, and in turn, resulting in a relatively lower etching rate therein and leading to a roughened surface with volcano-like protrusions. Typical diameter/height and density of protrusions are around 2-4 μm/2 μm and 106 cm-2. Through the use of KrF laser and KOH etching, an enhancement in the root-meansquare surface roughness by 250 times and an improvement in Lop by 25% at 750 mA were obtained. It is expected that the surface roughness of Gallium Nitride by KrF excimer laser technology would be a potential candidate for the fabrication of high power GaN-based LEDs for solid-state lighting in the near future.

Original languageEnglish
Title of host publicationLight-Emitting Diodes
Subtitle of host publicationMaterials, Devices, and Applications for Solid State Lighting XIV
DOIs
Publication statusPublished - 2010 May 5
EventLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV - San Francisco, CA, United States
Duration: 2010 Jan 262010 Jan 28

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7617
ISSN (Print)0277-786X

Other

OtherLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV
CountryUnited States
CitySan Francisco, CA
Period10-01-2610-01-28

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Lee, W. C., Uang, K. M., Chen, T. M., Kuo, D. M., Wang, P. R., Wang, P. H., & Wang, S-J. (2010). Surface roughness of gallium nitride with volcano-like protrusions formed by KrF excimer laser etching. In Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV [76170P] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7617). https://doi.org/10.1117/12.841636