@inproceedings{74a7482762184dacbf7e577fa278adfa,
title = "Surface roughness of gallium nitride with volcano-like protrusions formed by KrF excimer laser etching",
abstract = "Use of deep ultraviolet (248 nm) KrF laser irradiation to roughen vertical GaN-based LEDs surface with volcanolike protrusions for light output (Lop) improvement was proposed and demonstrated. After pulse irradiations of KrF laser (750-850 mJ/cm2), the rate of electron-hole pair recombination at sites with dislocation defects is greater than for crystalline GaN, favoring for the formation of GaOx, and in turn, resulting in a relatively lower etching rate therein and leading to a roughened surface with volcano-like protrusions. Typical diameter/height and density of protrusions are around 2-4 μm/2 μm and 106 cm-2. Through the use of KrF laser and KOH etching, an enhancement in the root-meansquare surface roughness by 250 times and an improvement in Lop by 25% at 750 mA were obtained. It is expected that the surface roughness of Gallium Nitride by KrF excimer laser technology would be a potential candidate for the fabrication of high power GaN-based LEDs for solid-state lighting in the near future.",
author = "Lee, {Wei Chi} and Uang, {Kai Ming} and Chen, {Tron Min} and Kuo, {Der Ming} and Wang, {Pei Ren} and Wang, {Po Hong} and Wang, {Shui Jinn}",
year = "2010",
doi = "10.1117/12.841636",
language = "English",
isbn = "9780819480132",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Light-Emitting Diodes",
note = "Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV ; Conference date: 26-01-2010 Through 28-01-2010",
}