Surface treatment and passivation of III-nitride LEDs

Ching Ting Lee, Yow Jon Lin

Research output: Contribution to journalConference article

Abstract

For the fabrication of III-nitride LEDs, the surface treatment and passivation using (NH4)2Sx solution were investigated. Using x-ray photoelectron spectroscopy (XPS) analysis, we found that the original native oxide on the III-nitride surface was effectively removed by the (NH4)2Sx solution. Furthermore, the Ga-S bonds and the occupation of nitrogen-related vacancies by the sulfur allowed a more stable and a lower surface state density. By using capacitance-voltage and photoluminescence measurements, we investigate the Schottky barrier height and surface state density of the (NH4)2Sx-treated III-nitride layers. The reduction of the surface state density is due to the formation of Ga-S bonds. To improve the ohmic performance, the preoxidation process was used before (NH4)2Sx treatment. The oxidation mechanism was investigated. The interfacial mechanism in ohmic metals contact to (NH4)2Sx-treated III-nitride layers was investigated. The function of the (NH4)2Sx treatment was analyzed.

Original languageEnglish
Pages (from-to)85-93
Number of pages9
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4641
DOIs
Publication statusPublished - 2002 Jan 1
EventLight-Emitting Diodes: Research, Manufacturing, and Applications VI - San Jose, CA, United States
Duration: 2002 Jan 222002 Jan 24

Fingerprint

Surface Treatment
Passivation
Nitrides
surface treatment
passivity
nitrides
Light emitting diodes
Surface treatment
Surface states
light emitting diodes
X-ray Spectroscopy
Vacancy
Photoluminescence
Density of States
Photoelectron spectroscopy
Capacitance
Sulfur
Oxidation
occupation
Oxides

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

@article{ff6f78c8f1264bd8ae5481fe384b2095,
title = "Surface treatment and passivation of III-nitride LEDs",
abstract = "For the fabrication of III-nitride LEDs, the surface treatment and passivation using (NH4)2Sx solution were investigated. Using x-ray photoelectron spectroscopy (XPS) analysis, we found that the original native oxide on the III-nitride surface was effectively removed by the (NH4)2Sx solution. Furthermore, the Ga-S bonds and the occupation of nitrogen-related vacancies by the sulfur allowed a more stable and a lower surface state density. By using capacitance-voltage and photoluminescence measurements, we investigate the Schottky barrier height and surface state density of the (NH4)2Sx-treated III-nitride layers. The reduction of the surface state density is due to the formation of Ga-S bonds. To improve the ohmic performance, the preoxidation process was used before (NH4)2Sx treatment. The oxidation mechanism was investigated. The interfacial mechanism in ohmic metals contact to (NH4)2Sx-treated III-nitride layers was investigated. The function of the (NH4)2Sx treatment was analyzed.",
author = "Lee, {Ching Ting} and Lin, {Yow Jon}",
year = "2002",
month = "1",
day = "1",
doi = "10.1117/12.469206",
language = "English",
volume = "4641",
pages = "85--93",
journal = "Proceedings of SPIE - The International Society for Optical Engineering",
issn = "0277-786X",
publisher = "SPIE",

}

Surface treatment and passivation of III-nitride LEDs. / Lee, Ching Ting; Lin, Yow Jon.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 4641, 01.01.2002, p. 85-93.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Surface treatment and passivation of III-nitride LEDs

AU - Lee, Ching Ting

AU - Lin, Yow Jon

PY - 2002/1/1

Y1 - 2002/1/1

N2 - For the fabrication of III-nitride LEDs, the surface treatment and passivation using (NH4)2Sx solution were investigated. Using x-ray photoelectron spectroscopy (XPS) analysis, we found that the original native oxide on the III-nitride surface was effectively removed by the (NH4)2Sx solution. Furthermore, the Ga-S bonds and the occupation of nitrogen-related vacancies by the sulfur allowed a more stable and a lower surface state density. By using capacitance-voltage and photoluminescence measurements, we investigate the Schottky barrier height and surface state density of the (NH4)2Sx-treated III-nitride layers. The reduction of the surface state density is due to the formation of Ga-S bonds. To improve the ohmic performance, the preoxidation process was used before (NH4)2Sx treatment. The oxidation mechanism was investigated. The interfacial mechanism in ohmic metals contact to (NH4)2Sx-treated III-nitride layers was investigated. The function of the (NH4)2Sx treatment was analyzed.

AB - For the fabrication of III-nitride LEDs, the surface treatment and passivation using (NH4)2Sx solution were investigated. Using x-ray photoelectron spectroscopy (XPS) analysis, we found that the original native oxide on the III-nitride surface was effectively removed by the (NH4)2Sx solution. Furthermore, the Ga-S bonds and the occupation of nitrogen-related vacancies by the sulfur allowed a more stable and a lower surface state density. By using capacitance-voltage and photoluminescence measurements, we investigate the Schottky barrier height and surface state density of the (NH4)2Sx-treated III-nitride layers. The reduction of the surface state density is due to the formation of Ga-S bonds. To improve the ohmic performance, the preoxidation process was used before (NH4)2Sx treatment. The oxidation mechanism was investigated. The interfacial mechanism in ohmic metals contact to (NH4)2Sx-treated III-nitride layers was investigated. The function of the (NH4)2Sx treatment was analyzed.

UR - http://www.scopus.com/inward/record.url?scp=0036030533&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036030533&partnerID=8YFLogxK

U2 - 10.1117/12.469206

DO - 10.1117/12.469206

M3 - Conference article

AN - SCOPUS:0036030533

VL - 4641

SP - 85

EP - 93

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

SN - 0277-786X

ER -