Surface treatment and passivation of III-nitride LEDs

Ching Ting Lee, Yow Jon Lin

Research output: Contribution to journalConference articlepeer-review


For the fabrication of III-nitride LEDs, the surface treatment and passivation using (NH4)2Sx solution were investigated. Using x-ray photoelectron spectroscopy (XPS) analysis, we found that the original native oxide on the III-nitride surface was effectively removed by the (NH4)2Sx solution. Furthermore, the Ga-S bonds and the occupation of nitrogen-related vacancies by the sulfur allowed a more stable and a lower surface state density. By using capacitance-voltage and photoluminescence measurements, we investigate the Schottky barrier height and surface state density of the (NH4)2Sx-treated III-nitride layers. The reduction of the surface state density is due to the formation of Ga-S bonds. To improve the ohmic performance, the preoxidation process was used before (NH4)2Sx treatment. The oxidation mechanism was investigated. The interfacial mechanism in ohmic metals contact to (NH4)2Sx-treated III-nitride layers was investigated. The function of the (NH4)2Sx treatment was analyzed.

Original languageEnglish
Pages (from-to)85-93
Number of pages9
JournalProceedings of SPIE - The International Society for Optical Engineering
Publication statusPublished - 2002 Jan 1
EventLight-Emitting Diodes: Research, Manufacturing, and Applications VI - San Jose, CA, United States
Duration: 2002 Jan 222002 Jan 24

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Condensed Matter Physics


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