Surface treatment effect on temperature-dependent properties of InGaP/GaAs heterobipolar transistors

Tzu Pin Chen, Ssu I. Fu, Wen Chau Liu, Shiou Ying Cheng, Jung Hui Tsai, Der Feng Guo, Wen Shiung Lour

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

Specific treatments of the base surface of InGaPGaAs heterojunction bipolar transistors are studied experimentally. The dual treatment method, based on the combination of ledge and sulfur passivation, shows better temperature-dependent characteristics including higher dc gain, lower saturation voltage, lower base-emitter junction turn on voltage, lower leakage current, lower collector and base current ideality factors nC and nB, and wider collector current operating regimes over the measured temperature range (300-400 K). Therefore, the dual surface treatment method provides promise for high-performance electronic applications.

Original languageEnglish
Article number034501
JournalJournal of Applied Physics
Volume101
Issue number3
DOIs
Publication statusPublished - 2007

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Surface treatment effect on temperature-dependent properties of InGaP/GaAs heterobipolar transistors'. Together they form a unique fingerprint.

Cite this