Surface treatment effect on temperature-dependent properties of InGaP/GaAs heterobipolar transistors

Tzu Pin Chen; Ssu I. Fu; Wen Chau Liu; Shiou Ying Cheng; Jung Hui Tsai; Der Feng Guo; Wen Shiung Lour

doi:10.1063/1.2432310

Surface treatment effect on temperature-dependent properties of InGaP/GaAs heterobipolar transistors

Tzu Pin Chen, Ssu I. Fu, Wen Chau Liu, Shiou Ying Cheng, Jung Hui Tsai, Der Feng Guo, Wen Shiung Lour

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Specific treatments of the base surface of InGaPGaAs heterojunction bipolar transistors are studied experimentally. The dual treatment method, based on the combination of ledge and sulfur passivation, shows better temperature-dependent characteristics including higher dc gain, lower saturation voltage, lower base-emitter junction turn on voltage, lower leakage current, lower collector and base current ideality factors nC and nB, and wider collector current operating regimes over the measured temperature range (300-400 K). Therefore, the dual surface treatment method provides promise for high-performance electronic applications.

Original language	English
Article number	034501
Journal	Journal of Applied Physics
Volume	101
Issue number	3
DOIs	https://doi.org/10.1063/1.2432310
Publication status	Published - 2007

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.1063/1.2432310

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@article{749606cceeec40f280fd3b515e7c5998,

title = "Surface treatment effect on temperature-dependent properties of InGaP/GaAs heterobipolar transistors",

abstract = "Specific treatments of the base surface of InGaPGaAs heterojunction bipolar transistors are studied experimentally. The dual treatment method, based on the combination of ledge and sulfur passivation, shows better temperature-dependent characteristics including higher dc gain, lower saturation voltage, lower base-emitter junction turn on voltage, lower leakage current, lower collector and base current ideality factors nC and nB, and wider collector current operating regimes over the measured temperature range (300-400 K). Therefore, the dual surface treatment method provides promise for high-performance electronic applications.",

author = "Chen, {Tzu Pin} and Fu, {Ssu I.} and Liu, {Wen Chau} and Cheng, {Shiou Ying} and Tsai, {Jung Hui} and Guo, {Der Feng} and Lour, {Wen Shiung}",

note = "Funding Information: Part of this work was supported by the National Science Council of the Republic of China under Contract No. NSC95-2221-E006-434-MY2. ",

year = "2007",

doi = "10.1063/1.2432310",

language = "English",

volume = "101",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

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T1 - Surface treatment effect on temperature-dependent properties of InGaP/GaAs heterobipolar transistors

AU - Chen, Tzu Pin

AU - Fu, Ssu I.

AU - Liu, Wen Chau

AU - Cheng, Shiou Ying

AU - Tsai, Jung Hui

AU - Guo, Der Feng

AU - Lour, Wen Shiung

N1 - Funding Information: Part of this work was supported by the National Science Council of the Republic of China under Contract No. NSC95-2221-E006-434-MY2.

PY - 2007

Y1 - 2007

N2 - Specific treatments of the base surface of InGaPGaAs heterojunction bipolar transistors are studied experimentally. The dual treatment method, based on the combination of ledge and sulfur passivation, shows better temperature-dependent characteristics including higher dc gain, lower saturation voltage, lower base-emitter junction turn on voltage, lower leakage current, lower collector and base current ideality factors nC and nB, and wider collector current operating regimes over the measured temperature range (300-400 K). Therefore, the dual surface treatment method provides promise for high-performance electronic applications.

AB - Specific treatments of the base surface of InGaPGaAs heterojunction bipolar transistors are studied experimentally. The dual treatment method, based on the combination of ledge and sulfur passivation, shows better temperature-dependent characteristics including higher dc gain, lower saturation voltage, lower base-emitter junction turn on voltage, lower leakage current, lower collector and base current ideality factors nC and nB, and wider collector current operating regimes over the measured temperature range (300-400 K). Therefore, the dual surface treatment method provides promise for high-performance electronic applications.

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