Specific treatments of the base surface of InGaPGaAs heterojunction bipolar transistors are studied experimentally. The dual treatment method, based on the combination of ledge and sulfur passivation, shows better temperature-dependent characteristics including higher dc gain, lower saturation voltage, lower base-emitter junction turn on voltage, lower leakage current, lower collector and base current ideality factors nC and nB, and wider collector current operating regimes over the measured temperature range (300-400 K). Therefore, the dual surface treatment method provides promise for high-performance electronic applications.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)