Switch the n-type to ambipolar transfer characteristics by illumination in n-type pentacene-based organic field-effect transistors

Tzung Da Tsai, Chung Yu Huang, Hsuan Ming Lin, Tzung Fang Guo, Ten Chin Wen

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

This work investigates the suppression of n-channel and the switch of transfer characteristics (from n-type to ambipolar) by illumination in n-type pentacene-based organic field-effect transistors (OFETs). The illumination outcomes differently on the output characteristics of OFETs, which markedly decreases the magnitude of drain current (n-channel) and shifts the turn-on voltage to a higher positive bias in the n-type regime, but induces the formation of p-channel in the p-type regime. We attribute that the trapped negative charges in the device as induced by illumination electrostatically shield the effective electrical field applied to the gate with source/drain electrodes and modulate the device performance. The result of quasi-static capacitance-voltage measurement agrees well with the modulations of the transfer characteristics for n-type OFETs by illumination. In addition, the de-trapping of charges recovers the n-type only output characteristics of pentacene-based OFETs. This study highlights the unique photo responses of n-type pentacene-based OFETs to the development of phototransistors of distinct output characteristics operated in n- and p-type regime.

Original languageEnglish
Pages (from-to)3805-3810
Number of pages6
JournalOrganic Electronics
Volume15
Issue number12
DOIs
Publication statusPublished - 2014 Dec

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

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